[1] Madey T E, Faradzhev N S, Yakshinskiy B V et al. Surface phenomena related to mirror degradation in extreme ultraviolet (EUV) lithography[J]. Applied Surface Science, 253, 1691-1708(2006).

[2] Li Chaoyi, Tao Baoquan, Guo Xiangshuai. Research progress on extreme ultraviolet multilayer techniques[J]. Journal of Quantum Optics, 26, 397-408(2020).

[3] [3] Yulin S, Benoit N, Feigl T, et al. MoSi multilayers with enhanced TiO2 RuO2capping layers[C]Proceedings of the SPIE 6921, Emerging Lithographic Technologies XII. 2008: 692118.

[4] Hollenshead J T, Klebanoff L E, Delgado G. Predicting radiation-induced carbon contamination of EUV optics[J]. Journal of Vacuum Science & Technology B, 37, 021602(2019).

[5] Motai K, Oizumi H, Miyagaki S et al. Cleaning technology for EUV multilayer mirror using atomic hydrogen generated with hot wire[J]. Thin Solid Films, 516, 839-843(2008).

[6] Wang Xun, Jin Chunshui, Kuang Shangqi. Simulation model of surface carbon deposition contamination under extreme ultraviolet radiation[J]. Acta Optica Sinica, 34, 0531001(2014).

[7] Mizutani U, Yamaguchi T, Ikuta H et al. Fabrication of Mo/Si multilayer mirrors for extreme ultraviolet lithography by means of superconducting bulk magnet magnetron sputtering[J]. Physica C: Superconductivity, 468, 1456-1460(2008).

[8] Zheng Yi, Sanche L. Effective and absolute cross sections for low-energy (1-30 eV) electron interactions with condensed biomolecules[J]. Applied Physics Reviews, 5, 021302(2018).

[9] Pelizzo M G, Suman M, Monaco G et al. High performance EUV multilayer structures insensitive to capping layer optical parameters[J]. Optics Express, 16, 15228-15237(2008).

[10] [10] Seo H S, Park J, Lee S Y, et al. Properties of EUVL masks as a function of capping layer absber stack structures[C]Proceedings of the SPIE 6517, Emerging Lithographic Technologies XI. 2007: 65171G.

[11] Bajt S, Chapman H N, Nguyen N et al. Design and performance of capping layers for extreme-ultraviolet multilayer mirrors[J]. Applied Optics, 42, 5750-5758(2003).

[12] [12] Nesládek P, Scht J, Krome T. EUV capping layer integrity[C]Proceedings of the SPIE 10807, Photomask Japan 2018: XXV Symposium on Photomask NextGeneration Lithography Mask Technology. 2018: 108070E.

[13] Wang Hongchang, Wang Zhanshan, Li Fosheng. Analysis of the reflective performance of EUV multilayer under the influence of capping layer[J]. Acta Physica Sinica, 53, 2368-2372(2004).

[14] Xu Da, Zhu Jingtao, Zhang Zhong. Design of capping layers on Mo/Si multilayer[J]. Acta Photonica Sinica, 38, 160-164(2009).

[15] Kim T G, Lee S Y, Kim C Y et al. Characterization of Ru layer for capping/buffer application in EUVL mask[J]. Microelectronic Engineering, 83, 688-691(2006).

[16] [16] Wang Xun. Study on surface anticontamination capping layer of the EUV optical elements related technologies[D]. Changchun: Graduate School of Chinese Academy of Sciences (Changchun Institute of Optics, Fine Mechanics Physics), 2015

[17] Nishiyama I, Oizumi H, Motai K et al. Reduction of oxide layer on Ru surface by atomic-hydrogen treatment[J]. Journal of Vacuum Science & Technology B, 23, 3129-3131(2005).

[18] Zhou Hongjun, Zhong Pengfei, Huo Tonglin. Cleaning of carbon contamination on Si wafer with activated oxygen by synchrotron radiation[J]. Acta Optica Sinica, 30, 907-910(2010).

[19] Kuang Shangqi, Li Shuo, Yang Haigui. Design and fabrication of EUV broadband multilayer mirrors with discrete thicknesses[J]. Optics and Precision Engineering, 26, 2395-2406(2018).

[20] Zhu Wenxiu, Jin Chunshui, Kuang Shangqi. Design and fabrication of the multilayer film of enhancing spectral-purity in extreme ultraviolet[J]. Acta Optica Sinica, 32, 1031002(2012).

[21] Zhu Guolong, Feng Shimeng, Shao Jianda. Automatically rotation-speed-controlled layer thickness of ultrathin multilayer reflectors[J]. Chinese Journal of Lasers, A28, 1027-1031(2001).