Infrared and Laser Engineering, Volume. 52, Issue 5, 20220592(2023)

Lifetime prediction method for high-power laser diodes under double-stress cross-step accelerated degradation test

Yeqi Zhang1,2, Zhenfu Wang1, Te Li1, Lang Chen1, Jiachen Zhang1, Shunhua Wu1,2, Jiachen Liu1,2, and Guowen Yang1
Author Affiliations
  • 1State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi’an 710119, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • show less
    References(26)

    [3] L J Wang, Y Q Ning, L Qin, . Development of high power diode laser. Chinese Journal of Luminescence, 36, 1-19(2015).

    [12] [12] Wang J , Bao L , Devito M , et al. Reliability perfmance of 808nm single emitter multimode laser diodes [C]Proceedings of SPIE, 2010, 7583: 758305.

    [13] [13] Konig H, Gerhard S, Ali M, et al. Blue highpower InGaN semiconduct laser diodes: Design optimization of laser bars single emitters f best perfmance reliability [C]Proceedings of the Conference on HighPower Diode Laser Technology XVIII, San Francisco, CA, Feb 0204, 2020, 11262: 112620Q.

    [14] B H Rong, X Y Wang, Z F An, . Accelerated life-time test of high-power laser diode. Semiconductor Technology, 33, 360-362(2008).

    [15] D H Wang, Y J L, Z F An. Step-accelerated aging study of high-power semiconductor lasers. Micro and Nano Electronics, 508-511(2008).

    [16] G G Lu, Y Huang, Z F Lei. Lifetime evaluation on high power cm-bars. Infrared and Laser Engineering, 41, 2328-2332(2012).

    [18] [18] Zhu Jing, Yang Thomas, Zhang Cuipeng, et al. Reliability study of highbrightness multiple single emitter diode lasers [C]Highpower Diode Laser Technology & Applications XIII, 2015, 9348: 93480J.

    [19] [19] Zhang H Y, Fan Y, Liu H, et al. Power degradation reliability study of high power laser bars at quasiCW operation[C]Novel Inplane Semiconduct Lasers XVI, 2017, 10123: 101231E,

    [22] Yanbin Qian, Shiwei Feng, Xiaoyu Ma, . Thermal characteristic of GaAs-based laser diodes. Infrared and Laser Engineering, 40, 2134-2137(2011).

    [23] Y S Wang, Y Q Mo, C H Zhang, . Study on statistical analysis for step-stress accelerated degradation tests with two accelerating stresses models and methods. Acta Arma-mentarii, 30, 451-456(2009).

    [24] S S Mao. Acceleration model for accelerated life test. Quality and Reliability, 15-17(2003).

    Tools

    Get Citation

    Copy Citation Text

    Yeqi Zhang, Zhenfu Wang, Te Li, Lang Chen, Jiachen Zhang, Shunhua Wu, Jiachen Liu, Guowen Yang. Lifetime prediction method for high-power laser diodes under double-stress cross-step accelerated degradation test[J]. Infrared and Laser Engineering, 2023, 52(5): 20220592

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Laser & laser optics

    Received: Aug. 17, 2022

    Accepted: --

    Published Online: Jul. 4, 2023

    The Author Email:

    DOI:10.3788/IRLA20220592

    Topics