Infrared and Laser Engineering, Volume. 52, Issue 5, 20220592(2023)
Lifetime prediction method for high-power laser diodes under double-stress cross-step accelerated degradation test
Fig. 2. Schematic diagram of the change in stress conditions for the cross-step accelerated degradation test
Fig. 3. Conversion relation between and the degradation track under each stress condition 与各个应力条件下的退化轨迹 的换算关系
Fig. 4. Photo of experimental 830 nm F-mount single-emitter device
Fig. 5. Schematic diagram of 830 nm F-mount single-emitter devices accelerated test platform
Fig. 6. Performance degradation data of 830 nm F-mount single-emitter devices
Fig. 7. Failure data points were fitted with the curve of Weibull distribution function and the fit was 92.24%. (a) Estimation results of the Weibull plot after coordinate transformation; (b) Fitting results of the failure distribution function
|
|
|
|
|
Get Citation
Copy Citation Text
Yeqi Zhang, Zhenfu Wang, Te Li, Lang Chen, Jiachen Zhang, Shunhua Wu, Jiachen Liu, Guowen Yang. Lifetime prediction method for high-power laser diodes under double-stress cross-step accelerated degradation test[J]. Infrared and Laser Engineering, 2023, 52(5): 20220592
Category: Laser & laser optics
Received: Aug. 17, 2022
Accepted: --
Published Online: Jul. 4, 2023
The Author Email: