Acta Physica Sinica, Volume. 69, Issue 17, 177102-1(2020)

Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor

Meng Zhang... Ruo-He Yao*, Yu-Rong Liu and Kui-Wei Geng |Show fewer author(s)
Author Affiliations
  • School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China
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    References(36)

    [1] Scholten A J, Tiemeijer L F, , Havens R J, Kort R, Langevelde R, Klaassen D B M, Jeamsaksiri W, [J]. International Conference on Noise and Fluctuations, 735(2005).

    [4] Spathis C, Georgakopoulou K, Birbas A[J]. 22nd International Conference on Noise and Fluctuations ICNF, 1(2013).

    [11] Jeon J, Lee J, Kim J, Park C H, Lee H, Oh H, Kang H K, Park B G, Shin H[J]. Symposium on VLSI Technology, 48(2009).

    [16] Chen X S, Chen C H, Deen M J[J]. International Conference on Noise and Fluctuations ICNF, 1(2017).

    [25] , Li Y X[J]. MOSFET Models for VLSI Circuit Simulation, 248-251(1999).

    [29] Lundstrom M[J]. Fundamentals of Carrier Transport 2nd Ed., 230-293(2009).

    [30] Tsividis Y[J]. Operation and Modeling of the MOS Transistor 3rd  Ed., 194-201(2011).

    [35] Chen C H, Chen D, Lee R, Lei P, Wan D[J]. Proceedings of the IEEE 2013 Custom Integrated Circuits Conference, 1(2013).

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    Meng Zhang, Ruo-He Yao, Yu-Rong Liu, Kui-Wei Geng. Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(17): 177102-1

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    Paper Information

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    Received: Apr. 5, 2020

    Accepted: --

    Published Online: Jan. 4, 2021

    The Author Email:

    DOI:10.7498/aps.69.20200497

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