Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Acta Physica Sinica, Volume. 69, Issue 17, 177102-1(2020)

Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor

Meng Zhang... Ruo-He Yao*, Yu-Rong Liu and Kui-Wei Geng |Show fewer author(s)
Author Affiliations
  • School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510641, China
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (8)
    Equations (28)
    References (36)
    Tools
    Paper Information
    Topics
    Figures & Tables(8)
    Structure diagram of the NMOSFET device.

    Fig. 1. Structure diagram of the NMOSFET device.

    Download full size
    View in Article
    Schematic diagram of the transistor with a fictitious dc source in the channel.

    Fig. 2. Schematic diagram of the transistor with a fictitious dc source in the channel.

    Download full size
    View in Article
    Full-shot noise and thermal noise vs. gate-source bias voltage (Leff = 40 nm).

    Fig. 3. Full-shot noise and thermal noise vs. gate-source bias voltage (Leff = 40 nm).

    Download full size
    View in Article
    Fano factor of shot noise vs. gate-source bias voltage (Leff = 40 nm).

    Fig. 4. Fano factor of shot noise vs. gate-source bias voltage (Leff = 40 nm).

    Download full size
    View in Article
    Full-shot noise and thermal noise vs. gate-source bias voltage (Leff = 20 nm).

    Fig. 5. Full-shot noise and thermal noise vs. gate-source bias voltage (Leff = 20 nm).

    Download full size
    View in Article
    Fano factor of shot noise vs. gate-source bias voltage (Leff = 20 nm).

    Fig. 6. Fano factor of shot noise vs. gate-source bias voltage (Leff = 20 nm).

    Download full size
    View in Article
    Full-shot noise and thermal noise vs. gate-source bias voltage (Leff = 10 nm).

    Fig. 7. Full-shot noise and thermal noise vs. gate-source bias voltage (Leff = 10 nm).

    Download full size
    View in Article
    Fano factor of shot noise vs. gate-source bias voltage (Leff = 10 nm).

    Fig. 8. Fano factor of shot noise vs. gate-source bias voltage (Leff = 10 nm).

    Download full size
    View in Article
    Tools

    Get Citation

    Copy Citation Text

    Meng Zhang, Ruo-He Yao, Yu-Rong Liu, Kui-Wei Geng. Shot noise model of the short channel metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(17): 177102-1

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category:

    Received: Apr. 5, 2020

    Accepted: --

    Published Online: Jan. 4, 2021

    The Author Email:

    DOI:10.7498/aps.69.20200497

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology