Infrared and Laser Engineering, Volume. 54, Issue 1, 20240419(2025)

A 281 GHz terahertz detector in 180 nm CMOS process

Ning JIANG1,2,3,4, Ying GUO1, Zhaoyang LIU2,3,4、*, and Feng QI2,3,4
Author Affiliations
  • 1College of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, China
  • 2Key Laboratory of Opto-Electronic Information Processing, Chinese Academy of Sciences, Shenyang 110169, China
  • 3Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110169, China
  • 4Key Laboratory of Terahertz Imaging and Sensing, Liaoning Province, Shenyang 110169, China
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    References(26)

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    [11] [11] TALEB F, HERNEZCARDOSO G G, CASTROCAMUS E, et al. Transmission, reflection, scattering acterization of building materials f indo THz communications [J]. IEEE Transactions on Terahertz Science Technology, 2023, 13(5): 421430.

    [12] W MIAO, F LI, Q LUO et al. A terahertz detector based on superconductor-graphene-superconductor Josephson junction. Carbon, 202, 112-117(2023).

    [14] Kaichu WANG, Qingfeng DING, Qi ZHOU. Arrayed terahertz vector measurement system based on AlGaN/GaN HEMT heterodyne mixer. Infrared and Laser Engineering, 53, 20240088(2024).

    [19] M FERRERAS, D ČIBIRAITė-LUKENSKIENė, A LISAUSKAS et al. Broadband sensing around 1 THz via a novel biquad-antenna-coupled low-NEP detector in CMOS. IEEE Transactions on Terahertz Science and Technology, 11, 16-27(2020).

    [23] Z LIU, L LIU, Z ZHANG et al. Terahertz detector for imaging in 180-nm standard CMOS process. Science China Information Sciences, 60, 1-9(2017).

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    Ning JIANG, Ying GUO, Zhaoyang LIU, Feng QI. A 281 GHz terahertz detector in 180 nm CMOS process[J]. Infrared and Laser Engineering, 2025, 54(1): 20240419

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    Paper Information

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    Received: Sep. 10, 2024

    Accepted: --

    Published Online: Feb. 12, 2025

    The Author Email:

    DOI:10.3788/IRLA20240419

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