Infrared and Laser Engineering, Volume. 54, Issue 1, 20240419(2025)

A 281 GHz terahertz detector in 180 nm CMOS process

Ning JIANG1,2,3,4, Ying GUO1, Zhaoyang LIU2,3,4、*, and Feng QI2,3,4
Author Affiliations
  • 1College of Information Science and Engineering, Shenyang University of Technology, Shenyang 110870, China
  • 2Key Laboratory of Opto-Electronic Information Processing, Chinese Academy of Sciences, Shenyang 110169, China
  • 3Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang 110169, China
  • 4Key Laboratory of Terahertz Imaging and Sensing, Liaoning Province, Shenyang 110169, China
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    Figures & Tables(14)
    Architecture of the detector
    Equivalent circuit of the detector
    Source input impedances of the NMOS transistor versus frequency
    Schematic diagram of the antenna structure
    Impedance magnitude of TL as a function of frequency
    ZANTwith (a) and without (b) IMN, respectively
    Fig.7(a) Calculated relative Rv of the detector based on the simulation results; (b) Radiation efficiency of the antenna
    Chip micrograph
    Detector responsivity measurement set-up
    (a) Measured Rv (purple) and simulated Rv (gray) at different source frequencies; (b) Measured NEP at different source frequencies
    Measured Rv and NEP of the detector as functions of the gate bias voltage at 281 GHz
    Terahertz scanning imaging system. (a) Structure diagram; (b) Physical diagram
    Imaging of three different cards illuminated by a source at 281 GHz
    • Table 1. Performance comparison of terahertz detectors

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      Table 1. Performance comparison of terahertz detectors

      TechnologyFrequency/GHzRv/V·W−1NEP/pW·Hz−1/2AntennaRef.
      180 nm CMOS281152419.9PatchThis paper
      130 nm SiGe HBT3049 8002.2Wire ring+Si lens[18]
      90 nm CMOS60022048Log-spiral+Si lens[16]
      65 nm CMOS4131 400178 loop+Si lens[17]
      65 nm CMOS1007.03×10620.4Log-periodic+Si lens[25]
      130 nm CMOS28025033Patch[20]
      180 nm CMOS8603 300106Patch[21]
      180 nm CMOS3400753203Patch[22]
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    Ning JIANG, Ying GUO, Zhaoyang LIU, Feng QI. A 281 GHz terahertz detector in 180 nm CMOS process[J]. Infrared and Laser Engineering, 2025, 54(1): 20240419

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    Paper Information

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    Received: Sep. 10, 2024

    Accepted: --

    Published Online: Feb. 12, 2025

    The Author Email:

    DOI:10.3788/IRLA20240419

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