Infrared and Laser Engineering, Volume. 54, Issue 1, 20240419(2025)
A 281 GHz terahertz detector in 180 nm CMOS process
Fig. 3. Source input impedances of the NMOS transistor versus frequency
Fig. 7. Fig.7(a) Calculated relative
Fig. 10. (a) Measured
Fig. 11. Measured
Fig. 12. Terahertz scanning imaging system. (a) Structure diagram; (b) Physical diagram
Fig. 13. Imaging of three different cards illuminated by a source at 281 GHz
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Ning JIANG, Ying GUO, Zhaoyang LIU, Feng QI. A 281 GHz terahertz detector in 180 nm CMOS process[J]. Infrared and Laser Engineering, 2025, 54(1): 20240419
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Received: Sep. 10, 2024
Accepted: --
Published Online: Feb. 12, 2025
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