Optical Instruments, Volume. 41, Issue 3, 81(2019)

Properties and preparation of low stress SiNx film by PECVD

LI Pan1,*... ZHANG Qian2, XIA Jinsong1 and LU Hong1 |Show fewer author(s)
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  • 1[in Chinese]
  • 2[in Chinese]
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    References(3)

    [11] [11] PEARCE C W, FETCHO R F, GROSS M D, et al. Characteristics of silicon nitride deposited by plasma‐enhanced chemical vapor deposition using a dual frequency radio‐frequency source[J]. Journal of Applied Physics, 1992, 71(4): 1838 – 1841.

    [13] [13] STONEY G G. The tension of metallic films deposited by electrolysis[J]. Proceedings of the Royal Society A, Mathematical, Physical and Engineering Sciences, 1909, 82(553): 172 – 175.

    [14] [14] QUIRK M, SERDA J. Semiconductor manufacturing technology[M]. Upper Saddle River, NJ: Prentice Hall, 2001: 257.

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    LI Pan, ZHANG Qian, XIA Jinsong, LU Hong. Properties and preparation of low stress SiNx film by PECVD[J]. Optical Instruments, 2019, 41(3): 81

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    Paper Information

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    Received: Jul. 16, 2018

    Accepted: --

    Published Online: Sep. 2, 2019

    The Author Email: Pan LI (leepan@hust.edu.cn)

    DOI:10.3969/j.issn.1005-5630.2019.03.013

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