Researching | Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

Journal of Semiconductors, Volume. 45, Issue 9, 092503(2024)

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

Shijie Pan¹, Shiwei Feng^1、*, Xuan Li², Zixuan Feng¹, Xiaozhuang Lu¹, Kun Bai¹, and Yamin Zhang¹

Author Affiliations

¹College of Microelectronics, Beijing University of Technology, Beijing 100124, China

²Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2024, 45(9): 092503

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Paper Information

Category: Articles

Received: Feb. 21, 2024

Accepted: --

Published Online: Oct. 11, 2024

The Author Email: Feng Shiwei (SWFeng)

DOI:10.1088/1674-4926/24020020

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