Journal of Semiconductors, Volume. 45, Issue 9, 092503(2024)

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

Shijie Pan1, Shiwei Feng1、*, Xuan Li2, Zixuan Feng1, Xiaozhuang Lu1, Kun Bai1, and Yamin Zhang1
Author Affiliations
  • 1College of Microelectronics, Beijing University of Technology, Beijing 100124, China
  • 2Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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    Figures & Tables(7)
    (Color online) Structure diagram of the depletion GaN HEMT.
    (Color online) Sequence of the 1 MeV electron radiation experiments.
    (Color online) (a) Transfer characteristics and (b) transconductance curve of Sample A before and after energy radiation with dose of 5 × 1014 cm−2.
    (Color online) (a) Gate characteristics and (b) output curves of Sample A before and after energy radiation with dose of 5 × 1014 cm−2. Inset: Gate leakage current in linear coordinates.
    (Color online) (a) The EMMI measurement with VGS of −7 V and (b) SEM image of Sample A after energy radiation with dose of 5 × 1014 cm−2.
    (Color online) (a) Transfer curves of Sample B under different radiation doses. Inset: Negative threshold voltage shift. (b) Gate characteristics. (c) Output curves. Inset: The increase in IDS with increasing doses under VGS of −2 V. (d) The OFF-state leakage current of ID and IG before (black) and after (purple) electron radiation under lower dose with VGS = −6 V and VDS ranging from 0 to 70 V.
    • Table 1. Electrical parameters of Sample B under different radiation doses.

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      Table 1. Electrical parameters of Sample B under different radiation doses.

      Dose (cm−2)VTH (V)ns (1013 cm−2)μ (cm2/(V·s))
      Unaged−2.6580.7681194
      5 × 1012−2.6710.7721235
      1 × 1013−2.6820.7751262
      5 × 1013−2.6930.7781269
      1 × 1014−2.7050.7821278
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    Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2024, 45(9): 092503

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    Paper Information

    Category: Articles

    Received: Feb. 21, 2024

    Accepted: --

    Published Online: Oct. 11, 2024

    The Author Email: Feng Shiwei (SWFeng)

    DOI:10.1088/1674-4926/24020020

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