Journal of Semiconductors, Volume. 45, Issue 9, 092503(2024)
Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors
Fig. 1. (Color online) Structure diagram of the depletion GaN HEMT.
Fig. 2. (Color online) Sequence of the 1 MeV electron radiation experiments.
Fig. 3. (Color online) (a) Transfer characteristics and (b) transconductance curve of Sample A before and after energy radiation with dose of 5 × 1014 cm−2.
Fig. 4. (Color online) (a) Gate characteristics and (b) output curves of Sample A before and after energy radiation with dose of 5 × 1014 cm−2. Inset: Gate leakage current in linear coordinates.
Fig. 5. (Color online) (a) The EMMI measurement with VGS of −7 V and (b) SEM image of Sample A after energy radiation with dose of 5 × 1014 cm−2.
Fig. 6. (Color online) (a) Transfer curves of Sample B under different radiation doses. Inset: Negative threshold voltage shift. (b) Gate characteristics. (c) Output curves. Inset: The increase in IDS with increasing doses under VGS of −2 V. (d) The OFF-state leakage current of ID and IG before (black) and after (purple) electron radiation under lower dose with VGS = −6 V and VDS ranging from 0 to 70 V.
|
Get Citation
Copy Citation Text
Shijie Pan, Shiwei Feng, Xuan Li, Zixuan Feng, Xiaozhuang Lu, Kun Bai, Yamin Zhang. Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors[J]. Journal of Semiconductors, 2024, 45(9): 092503
Category: Articles
Received: Feb. 21, 2024
Accepted: --
Published Online: Oct. 11, 2024
The Author Email: Feng Shiwei (SWFeng)