Strain enhancement for a MoS2-on-GaN photodetector with an Al2O3 stress liner grown by atomic layer deposition

Zhiwen Li; Jiangliu Luo; Shengqun Hu; Qiang Liu; Wenjie Yu; Youming Lu; Xinke Liu

doi:10.1364/PRJ.385885

Photonics Research, Volume. 8, Issue 6, 799(2020)

Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition

Zhiwen Li^1、†, Jiangliu Luo¹, Shengqun Hu¹, Qiang Liu^2、†, Wenjie Yu², Youming Lu¹, and Xinke Liu^1、*

Author Affiliations

¹College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China

²State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

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References(54)

[1] Y. Xiao, M. Zhou, J. Liu, J. Xu, L. Fu. Phase engineering of two-dimensional transition metal dichalcogenides. Sci. China Mater., 62, 759-775(2019).

[2] M. Ju, X. Liang, J. Liu, L. Zhou, Z. Liu, R. G. Mendes, M. H. Rümmeli, L. Fu. Universal substrate-trapping strategy to grow strictly monolayer transition metal dichalcogenides crystals. Chem. Mater., 29, 6095-6103(2017).

[3] Q. Zhang, L. Fu. Novel insights and perspectives into weakly coupled ReS₂ toward emerging applications. Chem, 5, 505-525(2019).

[4] Q. Zhang, Y. Xiao, T. Zhang, Z. Weng, M. Zeng, S. Yue, R. G. Mendes, L. Wang, S. Chen, M. H. Rümmeli, L. Peng, L. Fu. Iodine-mediated chemical vapor deposition growth of metastable transition metal dichalcogenides. Chem. Mater., 29, 4641-4644(2017).

[5] Z. Li, J. Wu, C. Wang, H. Zhang, W. Yu, Y. Lu, X. Liu. High-performance monolayer MoS₂ photodetector enabled by oxide stress liner using scalable chemical vapor growth method. Nanophotonics(2020).

[6] A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, K.-W. Ang. Large-scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure. Adv. Opt. Mater., 6, 1800461(2018).

[7] X. Huang, X. Feng, L. Chen, L. Wang, W. C. Tan, L. Huang, K.-W. Ang. Fabry-Perot cavity enhanced light-matter interactions in two-dimensional van der Waals heterostructure. Nano Energy, 62, 667-673(2019).

[8] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis. Single-layer MoS₂ transistors. Nat. Nanotechnol., 6, 147-150(2011).

[9] S. Kim, A. Konar, W.-S. Hwang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J.-B. Yoo, J.-Y. Choi, Y. W. Jin, S. Y. Lee, D. Jena, W. Choi, K. Kim. High-mobility and low-power thin-film transistors based on multilayer MoS₂ crystals. Nat. Commun., 3, 1011(2012).

[10] T. Wang, R. Zhu, J. Zhuo, Z. Zhu, Y. Shao, M. Li. Direct detection of DNA below ppb level based on thionin-functionalized layered MoS₂ electrochemical sensors. Anal. Chem., 86, 12064-12069(2014).

[11] Z. P. Ling, R. Yang, J. W. Chai, S. J. Wang, W. S. Leong, Y. Tong, D. Lei, Q. Zhou, X. Gong, D. Z. Chi, K. W. Ang. Large-scale two-dimensional MoS₂ photodetectors by magnetron sputtering. Opt. Express, 23, 13580-13586(2015).

[12] F. Liu, Y. Wang, X. Liu, J. Wang, H. Guo. A theoretical investigation of orientation-dependent transport in monolayer MoS₂ transistors at the ballistic limit. IEEE Electron Device Lett., 36, 1091-1093(2015).

[13] R. Kappera, D. Voiry, S. E. Yalcin, B. Branch, G. Gupta, A. D. Mohite, M. Chhowalla. Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors. Nat. Mater., 13, 1128-1134(2014).

[14] J.-G. Song, S. J. Kim, W. J. Woo, Y. Kim, I.-K. Oh, G. H. Ryu, Z. Lee, J. H. Lim, J. Park, H. Kim. Effect of Al₂O₃ deposition on performance of top-gated monolayer MoS₂-based field effect transistor. ACS Appl. Mater. Interfaces, 8, 28130-28135(2016).

[15] Q. A. Vu, S. Fan, S. H. Lee, M.-K. Joo, W. J. Yu, Y. H. Lee. Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS₂ field-effect transistors. 2D Mater., 5, 031001(2018).

[16] M. Zeng, Y. Xiao, J. Liu, K. Yang, L. Fu. Exploring two-dimensional materials toward the next-generation circuits: from monomer design to assembly control. Chem. Rev., 118, 6236-6296(2018).

[17] S. Manzeli, D. Ovchinnikov, D. Pasquier, O. V. Yazyev, A. Kis. 2D transition metal dichalcogenides. Nat. Rev. Mater., 2, 17033(2017).

[18] H. J. Conley, B. Wang, J. I. Ziegler, R. F. Haglund, S. T. Pantelides, K. I. Bolotin. Bandgap engineering of strained monolayer and bilayer MoS₂. Nano Lett., 13, 3626-3630(2013).

[19] J. Qi, Y.-W. Lan, A. Z. Stieg, J.-H. Chen, Y.-L. Zhong, L.-J. Li, C.-D. Chen, Y. Zhang, K. L. Wang. Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics. Nat. Commun., 6, 7430(2015).

[20] I. Niehues, R. Schmidt, M. Drüppel, P. Marauhn, D. Christiansen, M. Selig, G. Berghäuser, D. Wigger, R. Schneider, L. Braasch, R. Koch, A. Castellanos-Gomez, T. Kuhn, A. Knorr, E. Malic, M. Rohlfing, S. Michaelis de Vasconcellos, R. Bratschitsch. Strain control of exciton-phonon coupling in atomically thin semiconductors. Nano Lett., 18, 1751-1757(2018).

[21] X. Dou, K. Ding, D. Jiang, X. Fan, B. Sun. Probing spin-orbit coupling and interlayer coupling in atomically thin molybdenum disulfide using hydrostatic pressure. ACS Nano, 10, 1619-1624(2016).

[22] S. Deng, A. V. Sumant, V. Berry. Strain engineering in two-dimensional nanomaterials beyond graphene. Nano Today, 22, 14-35(2018).

[23] R. Roldán, A. Castellanos-Gomez, E. Cappelluti, F. Guinea. Strain engineering in semiconducting two-dimensional crystals. J. Phys. Condens. Matter., 27, 313201(2015).

[24] J. Feng, X. Qian, C.-W. Huang, J. Li. Strain-engineered artificial atom as a broad-spectrum solar energy funnel. Nat. Photonics, 6, 866-872(2012).

[25] S. Pak, J. Lee, Y.-W. Lee, A. R. Jang, S. Ahn, K. Y. Ma, Y. Cho, J. Hong, S. Lee, H. Y. Jeong, H. Im, H. S. Shin, S. M. Morris, S. Cha, J. I. Sohn, J. M. Kim. Strain-mediated interlayer coupling effects on the excitonic behaviors in an epitaxially grown MoS₂/WS₂ van der Waals heterobilayer. Nano Lett., 17, 5634-5640(2017).

[26] S. Manzeli, A. Allain, A. Ghadimi, A. Kis. Piezoresistivity and strain-induced band gap tuning in atomically thin MoS₂. Nano Lett., 15, 5330-5335(2015).

[27] A. P. Nayak, S. Bhattacharyya, J. Zhu, J. Liu, X. Wu, T. Pandey, C. Jin, A. K. Singh, D. Akinwande, J.-F. Lin. Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide. Nat. Commun., 5, 3731(2014).

[28] G. H. Ahn, M. Amani, H. Rasool, D.-H. Lien, J. P. Mastandrea, J. W. Ager, M. Dubey, D. C. Chrzan, A. M. Minor, A. Javey. Strain-engineered growth of two-dimensional materials. Nat. Commun., 8, 608(2017).

[29] S.-W. Wang, H. Medina, K.-B. Hong, C.-C. Wu, Y. Qu, A. Manikandan, T.-Y. Su, P.-T. Lee, Z.-Q. Huang, Z. Wang, F.-C. Chuang, H.-C. Kuo, Y.-L. Chueh. Thermally strained band gap engineering of transition-metal dichalcogenide bilayers with enhanced light-matter interaction toward excellent photodetectors. ACS Nano, 11, 8768-8776(2017).

[30] D. Kufer, G. Konstantatos. Highly sensitive, encapsulated MoS₂ photodetector with gate controllable gain and speed. Nano Lett., 15, 7307-7313(2015).

[31] S. Das, H.-Y. Chen, A. V. Penumatcha, J. Appenzeller. High performance multilayer MoS₂ transistors with scandium contacts. Nano Lett., 13, 100-105(2013).

[32] S. Yu, S. Ran, H. Zhu, K. Eshun, C. Shi, K. Jiang, K. Gu, F. J. Seo, Q. Li. Study of interfacial strain at the α-Al₂O₃/monolayer MoS₂ interface by first principle calculations. Appl. Surf. Sci., 428, 593-597(2018).

[33] M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard, P. J. Hasnip, S. J. Clark, M. C. Payne. First-principles simulation: ideas, illustrations and the CASTEP code. J. Phys. Condens. Matter, 14, 2717-2744(2002).

[34] M. A. Baker, R. Gilmore, C. Lenardi, W. Gissler. XPS investigation of preferential sputtering of S from MoS₂ and determination of MoS_x stoichiometry from Mo and S peak positions. Appl. Surf. Sci., 150, 255-262(1999).

[35] J. Kong, K. T. Park, A. C. Miller, K. Klier. Molybdenum disulfide single crystal (0002) plane XPS spectra. Surf. Sci. Spectra, 7, 69-74(2000).

[36] D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, T. G. Ivanov. Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride. ACS Nano, 10, 3580-3588(2016).

[37] Raman and Absorbance of multilayer MoS₂. Dataset 1.

[38] I. Calizo, A. A. Balandin, W. Bao, F. Miao, C. N. Lau. Temperature dependence of the Raman spectra of graphene and graphene multilayers. Nano Lett., 7, 2645-2649(2007).

[39] L. Su, Y. Zhang, Y. Yu, L. Cao. Dependence of coupling of quasi 2-D MoS₂ with substrates on substrate types, probed by temperature dependent Raman scattering. Nanoscale, 6, 4920-4927(2014).

[40] S. Lei, L. Ge, S. Najmaei, A. George, R. Kappera, J. Lou, M. Chhowalla, H. Yamaguchi, G. Gupta, R. Vajtai, A. D. Mohite, P. M. Ajayan. Evolution of the electronic band structure and efficient photo-detection in atomic layers of InSe. ACS Nano, 8, 1263-1272(2014).

[41] D. J. Late. Temperature dependent phonon shifts in few-layer black phosphorus. ACS Appl. Mater. Interfaces, 7, 5857-5862(2015).

[42] A. S. Pawbake, M. S. Pawar, S. R. Jadkar, D. J. Late. Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies. Nanoscale, 8, 3008-3018(2016).

[43] S. X. Yang, C. Wang, C. Ataca, Y. Li, H. Chen, H. Cai, A. Suslu, J. C. Grossman, C. B. Jiang, Q. Liu, S. Tongay. Self-driven photodetector and ambipolar transistor in atomically thin GaTe-MoS₂ p–n vdW heterostructure. ACS Appl. Mater. Interfaces, 8, 2533-2539(2016).

[44] X. Feng, V. V. Kulish, P. Wu, X. Liu, K.-W. Ang. Anomalously enhanced thermal stability of phosphorene via metal adatom doping: an experimental and first-principles study. Nano Res., 9, 2687-2695(2016).

[45] Z. Ding, Q.-X. Pei, J.-W. Jiang, Y.-W. Zhang. Manipulating the thermal conductivity of monolayer MoS₂ via lattice defect and strain engineering. J. Phys. Chem. C, 119, 16358-16365(2015).

[46] S. Bertolazzi, J. Brivio, A. Kis. Stretching and breaking of ultrathin MoS₂. ACS Nano, 5, 9703-9709(2011).

[47] A. R. Klots, A. K. M. Newaz, B. Wang, D. Prasai, H. Krzyzanowska, J. Lin, D. Caudel, N. J. Ghimire, J. Yan, B. L. Ivanov, K. A. Velizhanin, A. Burger, D. G. Mandrus, N. H. Tolk, S. T. Pantelides, K. I. Bolotin. Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy. Sci. Rep., 4, 6608(2014).

[48] H. S. Lee, M. S. Kim, H. Kim, Y. H. Lee. Identifying multiexcitons in MoS₂ monolayers at room temperature. Phys. Rev. B, 93, 140409(2016).

[49] C. Soci, A. Zhang, B. Xiang, S. A. Dayeh, D. P. R. Aplin, J. Park, X. Y. Bao, Y. H. Lo, D. Wang. ZnO nanowire UV photodetectors with high internal gain. Nano Lett., 7, 1003-1009(2007).

[50] F. González-Posada, R. Songmuang, M. Den Hertog, E. Monroy. Room-temperature photodetection dynamics of single GaN nanowires. Nano Lett., 12, 172-176(2012).

[51] W. Zhang, J.-K. Huang, C.-H. Chen, Y.-H. Chang, Y.-J. Cheng, L.-J. Li. High-gain phototransistors based on a CVD MoS₂ monolayer. Adv. Mater., 25, 3456-3461(2013).

[52] A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, A. K. M. Newaz. Large array fabrication of high performance monolayer MoS₂ photodetectors. Appl. Phys. Lett., 111, 043110(2017).

[53] A. Zhang, S. You, C. Soci, Y. Liu, D. Wang, Y.-H. Lo. Silicon nanowire detectors showing phototransistive gain. Appl. Phys. Lett., 93, 121110(2008).

[54] L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, K.-W. Ang. Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power. ACS Appl. Mater. Interfaces, 9, 36130-36136(2017).

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Zhiwen Li, Jiangliu Luo, Shengqun Hu, Qiang Liu, Wenjie Yu, Youming Lu, Xinke Liu. Strain enhancement for a MoS₂-on-GaN photodetector with an Al₂O₃ stress liner grown by atomic layer deposition[J]. Photonics Research, 2020, 8(6): 799

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Paper Information

Category: Optoelectronics

Received: Dec. 19, 2019

Accepted: Feb. 29, 2020

Published Online: Apr. 30, 2020

The Author Email: Xinke Liu (xkliu@szu.edu.cn)

DOI:10.1364/PRJ.385885

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology