Photonics Research, Volume. 8, Issue 6, 799(2020)
Strain enhancement for a MoS2-on-GaN photodetector with an Al2O3 stress liner grown by atomic layer deposition
Fig. 1. Material characterization of multilayer
Fig. 2. Simulation of multilayer
Fig. 3. Schematic and measurement of
Fig. 4. Performance of control and stress liner photodetectors. (a) Gain and EQE as a function of incident power; significant increases in both values for stress liner photodetector; (b) NEP and detectivity as a function of incident power; reduced performance of both for stress liner photodetector due to the increase in dark current.
Fig. 5. Time curve of photocurrent with a switch on/off light. (a) Photocurrent-time curve of control and stress liner photodetectors illuminated by 365 nm light source with the incident power of 5.647 μW at 20 V, respectively. The corresponding rise time (from 10% to 90% of maximum photocurrent) and the fall time (from 90% to 10% of maximum photocurrent) of (b) control and (c) stress liner photodetector, respectively.
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Zhiwen Li, Jiangliu Luo, Shengqun Hu, Qiang Liu, Wenjie Yu, Youming Lu, Xinke Liu. Strain enhancement for a MoS2-on-GaN photodetector with an Al2O3 stress liner grown by atomic layer deposition[J]. Photonics Research, 2020, 8(6): 799
Category: Optoelectronics
Received: Dec. 19, 2019
Accepted: Feb. 29, 2020
Published Online: Apr. 30, 2020
The Author Email: Xinke Liu (xkliu@szu.edu.cn)