Acta Photonica Sinica, Volume. 52, Issue 1, 0116001(2023)

Influence of Silicon Oxide Layer Thickness on Electronic State Structure and Optical Properties of Si/SiO2 Interface

Anchen WANG1, Zhongmei HUANG1,4、*, Weiqi HUANG1,2、**, Qian ZHANG1, Chun LIU1, Zilin WANG2, Ke WANG2, and Shirong LIU3
Author Affiliations
  • 1Institute of Nanophotonic Physics,College of Materials and Metallurgy,Guizhou University,Guiyang 550025,China
  • 2College of Physics & Electronic Engineering,Hainan Normal University,Haikou 571158,China
  • 3State Key Laboratory of Environment Geochemistry,Institute of Geochemistry Chinese Academy of Sciences Guiyang550003,China
  • 4Key Laboratory of Micro and Nano Photonic Structures(Ministry of Education),State key Laboratory of Surface Physics,Fudan University,Shanghai 200433,China
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    Anchen WANG, Zhongmei HUANG, Weiqi HUANG, Qian ZHANG, Chun LIU, Zilin WANG, Ke WANG, Shirong LIU. Influence of Silicon Oxide Layer Thickness on Electronic State Structure and Optical Properties of Si/SiO2 Interface[J]. Acta Photonica Sinica, 2023, 52(1): 0116001

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    Paper Information

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    Received: Jun. 21, 2022

    Accepted: Aug. 22, 2022

    Published Online: Feb. 27, 2023

    The Author Email: HUANG Zhongmei (zmhuang@gzu.edu.cn), HUANG Weiqi (wqhuang@gzu.edu.cn)

    DOI:10.3788/gzxb20235201.0116001

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