Fig. 1. Energy band structure of block α-cristobalite

Fig. 2. Total density of states and partial electron density of bulk α-cristobalite

Fig. 3. Structure of α-cristobalite film with different thickness.

Fig. 4. Energy band structure of α-cristobalite film with different α-cristobalite thickness

Fig. 5. Relationship between the band gap of α-cristobalite and the thickness of α-cristobalite in thin films

Fig. 6. Structure of Si/SiO₂ interface with different thickness of silicon oxide layer

Fig. 7. Energy band structure of Si/SiO₂ interface with different thickness of silicon oxide layer

Fig. 8. Relationship between energy band gap of Si/SiO₂ interface and thickness of silicon oxide layer

Fig. 9. The total density of states and the density of partial wave electrons at the Si/SiO₂ interface with the thickness of the silicon oxide layer of 1.047 nm and 2.887 nm

Fig. 10. Relationship between imaginary part of dielectric function of Si/SiO₂ interface and thickness of silicon oxide layer

Fig. 11. Relationship between absorption coefficient of Si/SiO₂ interface and thickness of silicon oxide layer

Fig. 12. Relationship between the refractive index of Si/SiO₂ interface and the thickness of silicon oxide layer

Fig. 13. Optical microscope image of the prepared Si/SiO₂ interface

Fig. 14. PL spectrum on Si/SiO₂ interface