Photonics Research, Volume. 6, Issue 2, 109(2018)
Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications
Fig. 2. Microwave electrical mode distribution of the TWMZM cross section (a) before and (b) after the silicon substrate is removed.
Fig. 3. Microwave attenuation based on finite element method (FEM) simulations on unloaded CPS transmission lines before and after substrate removing of the wafer used in our design.
Fig. 4. Simulated EO
Fig. 5. Fabrication process of the substrate removed modulator based on IME’s silicon photonics platform.
Fig. 6. Micrograph of the fabricated substrate removed silicon modulator viewed from above and the enlarged picture of the (a) edge couple, (b) phase shifter, and (c) the electrode region.
Fig. 7. (a) Measured EE
Fig. 8. Measured EO
Fig. 9. Experimental setup for the substrate removed TWMZM OOK eye-diagram measurements.
Fig. 10. Optical eye diagrams at the different rates of
Fig. 11. Experimental setup for the substrate removed TWMZM PAM-4 eye-diagram measurements.
Fig. 12. Measured PAM-4 modulation optical eye diagrams at
Fig. 13. Experimental setup for the PAM-4 signal transmission based on the substrate removed silicon modulator even different distances.
Fig. 14. Measured curve of BER versus the received optical power for
Fig. 15. Measured curve of BER versus the received optical power for
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Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu. Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications[J]. Photonics Research, 2018, 6(2): 109
Category: Silicon Photonics
Received: Oct. 27, 2017
Accepted: Dec. 10, 2017
Published Online: Jul. 10, 2018
The Author Email: Xi Xiao (xxiao@wri.com.cn)