Silicon intensity Mach–Zehnder modulator for single lane 100  Gb/s applications

Miaofeng Li; Lei Wang; Xiang Li; Xi Xiao; Shaohua Yu

doi:10.1364/PRJ.6.000109

Photonics Research, Volume. 6, Issue 2, 109(2018)

Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications

Miaofeng Li^1,2,3, Lei Wang^2,3, Xiang Li^2,3, Xi Xiao^2,3、*, and Shaohua Yu^1,2,3

¹Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, Hubei, China

²State Key Laboratory of Optical Communication Technologies and Networks, Wuhan Research Institute of Posts & Telecommunications, Wuhan 430074, Hubei, China

³National Information Optoelectronics Innovation Center, Wuhan 430074, Hubei, China

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Miaofeng Li, Lei Wang, Xiang Li, Xi Xiao, Shaohua Yu. Silicon intensity Mach–Zehnder modulator for single lane 100 Gb/s applications[J]. Photonics Research, 2018, 6(2): 109

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Paper Information

Category: Silicon Photonics

Received: Oct. 27, 2017

Accepted: Dec. 10, 2017

Published Online: Jul. 10, 2018

The Author Email: Xi Xiao (xxiao@wri.com.cn)

DOI:10.1364/PRJ.6.000109

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology