Effect of Electrostatic Field Inversion in (10<inline-formula><math id="M2" xmlns:mml="http://www.w3.org/1998/Math/MathML"><mover><mrow><mn mathvariant="normal">1</mn></mrow><mo>¯</mo></mover></math></inline-formula>1)-Plane InGaN Quantum Wells on Photoelectric Properties of Blue Light-Emitting Diodes

Ruimei Yin; Wei Jia; Hailiang Dong; Zhigang Jia; Tianbao Li; Chunyan Yu; Zhuxia Zhang; Bingshe Xu

doi:10.3788/AOS202242.2125001

Acta Optica Sinica, Volume. 42, Issue 21, 2125001(2022)

Effect of Electrostatic Field Inversion in (10 $\bar{1}$ 1)-Plane InGaN Quantum Wells on Photoelectric Properties of Blue Light-Emitting Diodes

Ruimei Yin¹, Wei Jia^1,2、*, Hailiang Dong¹, Zhigang Jia¹, Tianbao Li¹, Chunyan Yu¹, Zhuxia Zhang¹, and Bingshe Xu^1,2,3

Author Affiliations

¹Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, Shanxi , China

²Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030032, Shanxi , China

³Institute of Atomic and Molecular Science, Shaanxi University of Science & Technology, Xi′an710021, Shaanxi , China

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Figures & Tables(9)

Fig. 1. Schematic of epitaxial structure of simulated InGaN/GaN MQWs LED

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Fig. 2. Total polarization intensity ΔP_n in In_0.18Ga_0.82N SQW as a function of crystallographic orientation [inserts are semi-polar (10 $\bar{1}$ 1) plane and semi-polar (10 $\bar{1} \bar{1}$ ) plane]

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Fig. 3. Energy band profiles and wave function diagrams of 3 nm In_0.18Ga_0.82N SQW with different crystallographic planes at current density of 50 A/cm². (a) (0001) plane; (b) (10 $\bar{1}$ 1) plane

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Fig. 4. Electrostatic field distributions of GaN-based MQWs LED at current density of 50 A/cm². (a) (0001) plane; (b) (10 $\bar{1}$ 1) plane

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Fig. 5. Energy band profiles and electron and hole wave function distributions of GaN-based MQWs LED at the current density of50 A/cm². (a) (0001) plane; (b) (10 $\bar{1}$ 1) plane

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Fig. 6. Carrier concentration distributions of MQWs in GaN-based LED at current density of 50 A/cm². Carrier concentration distributions of (a) (0001) plane and (b) (10 $\bar{1}$ 1) plane; current density distributions of (c) electrons and (d) holes

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Fig. 7. Carrier recombination profiles in GaN-based MQWs LEDs on (0001) plane and (10 $\bar{1}$ 1) plane at current density of 50 A/cm².(a) Radiative recombination rate; (b) nonradiative recombination rate; (c) SRH recombination rate; (d) Auger recombination rate

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Fig. 8. Simulated electroluminescence spectra and IQE curves of GaN-based LEDs on (0001) plane and (10 $\bar{1}$ 1) plane.(a) Electroluminescence spectra; (b) IQE curves

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Table 1. Effective potential barrier $Δ E_{P B}$ for QB to electrons in band structure of GaN-based MQWs LEDs with different crystal planes

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Table 1. Effective potential barrier $Δ E_{P B}$ for QB to electrons in band structure of GaN-based MQWs LEDs with different crystal planes

Crystal orientation	$Δ E_{P B}$ （QB1） /meV	$Δ E_{P B}$ （QB2） /meV	$Δ E_{P B}$ （QB3） /meV	$Δ E_{P B}$ （QB4） /meV	$Δ E_{P B}$ （QB5）/ meV	Average of $Δ E_{P B}$ /meV
（0001）	428.8	440.0	433.6	378.8	129.0	362.0
（10 $\bar{1}$ 1）	377.3	398.2	419.0	417.6	465.0	425.4

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Ruimei Yin, Wei Jia, Hailiang Dong, Zhigang Jia, Tianbao Li, Chunyan Yu, Zhuxia Zhang, Bingshe Xu. Effect of Electrostatic Field Inversion in (10 $\bar{1}$ 1)-Plane InGaN Quantum Wells on Photoelectric Properties of Blue Light-Emitting Diodes[J]. Acta Optica Sinica, 2022, 42(21): 2125001

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Paper Information

Category: OPTOELECTRONICS

Received: Mar. 16, 2022

Accepted: May. 23, 2022

Published Online: Nov. 4, 2022

The Author Email: Jia Wei (jiawei@tyut.edu.cn)

DOI:10.3788/AOS202242.2125001

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Effective potential barrier ΔEPB for QB to electrons in band structure of GaN-based MQWs LEDs with different crystal planes

Table 1. Effective potential barrier ΔEPB for QB to electrons in band structure of GaN-based MQWs LEDs with different crystal planes

Table 1. Effective potential barrier $Δ E_{P B}$ for QB to electrons in band structure of GaN-based MQWs LEDs with different crystal planes

Table 1. Effective potential barrier $Δ E_{P B}$ for QB to electrons in band structure of GaN-based MQWs LEDs with different crystal planes