In this paper, polarization intensity as a function of crystallographic orientation is studied by the InGaN/GaN single quantum well model. The results reveal that the polarization electric field inversion in the semi-polar (101¯1) quantum well leads to upward bending of the energy band, and the electron wave function in the quantum well is close to the n-side, which is likely to successfully suppress electron leakage. The simulation of the epitaxial structure of (101¯1)-plane InGaN/GaN multi-quantum-well blue light-emitting diodes (LEDs) demonstrates that LEDs grown on the semi-polar (101¯1) plane can elevate the effective blocking barrier of the quantum barrier and suppress electron leakage. Moreover, the (101¯1) plane greatly reduces the hole injection barrier, promotes the even distribution of carriers, and reduces Auger recombination probability. Finally, the efficiency droop in (101¯1)-plane GaN-based LEDs is drastically reduced to 9% at the current density of 300 A/cm² compared with 42% efficiency droop in the (0001) plane, and electroluminescence intensity is increased by 48%. The electrostatic field inversion of the (101¯1)-plane InGaN quantum well is an important reason for its excellent photoelectric properties.