Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

Akhil Raj Kumar Kalapala; Dong Liu; Sang June Cho; Jeongpil Park; Deyin Zhao; John D. Albrecht; Baxter Moody; Zhenqiang Ma; Weidong Zhou

doi:10.29026/oea.2020.190025

Opto-Electronic Advances, Volume. 3, Issue 4, 190025-1(2020)

Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

Akhil Raj Kumar Kalapala1... Dong Liu2, Sang June Cho2, Jeongpil Park2, Deyin Zhao1, John D. Albrecht4,*, Baxter Moody3, Zhenqiang Ma2 and Weidong Zhou1 |Show fewer author(s)

Author Affiliations

¹Department of Electrical and Computer Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States

²Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States

³HexaTech, Inc., 991 Aviation Parkway, Suite 800, Morrisville, North Carolina 27560, United States

⁴Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, United States

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References(12)

[1] S Nakamura, S Pearton, G Fasol. The Blue Laser Diode: The Complete Story(2000).

[2] T Kinoshita, T Obata, T Nagashima, H Yanagi, B Moody et al. Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy. Appl Phys Express, 6, 092103(2013).

[3] H Yoshida, Y Yamashita, M Kuwabara, H Kan. A 342-nm ultraviolet alGaN multiple-quantum-well laser diode. Nat Photonics, 2, 551(2008).

[4] J Q Xie, S Mita, Z Bryan, W Guo, L Hussey et al. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet alGaN heterostructures. Appl Phys Lett, 102, 171102(2013).

[5] V Adivarahan, W H Sun, A Chitnis, M Shatalov, S Wu et al. 250 nm AlGaN light-emitting diodes. Appl Phys Lett, 85, 2175-2177(2004).

[6] T Takano, Y Narita, A Horiuchi, H Kawanishi. Room-temperature deep-ultraviolet lasing at 241.5 nm of AlGaN multiple-quantum-well laser. Appl Phys Lett, 84, 3567-3569(2004).

[7] T Wunderer, C L Chua, Z H Yang, J E Northrup, N M Johnson et al. Pseudomorphically grown ultraviolet C photopumped lasers on bulk AlN substrates. Appl Phys Express, 4, 092101(2011).

[8] W Guo, Z Bryan, J Q Xie, R Kirste, S Mita et al. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates. J Appl Phys, 115, 103108(2014).

[9] R Kirste, Q Guo, J H Dycus, A Franke, S Mita et al. 6 kW/cm² UVC laser threshold in optically pumped lasers achieved by controlling point defect formation. Appl Phys Express, 11, 082101(2018).

[10] [10] Proceedings of 2015 IEEE Summer Topicals Meeting Series (SUM) 123-124 (IEEE, 2015); http://doi.org/10.1109/PHOSST.2015.7248225.

[11] [11] Kalapala A R, Liu D, Cho S J, Park J, Zhao D Y et al. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates. ProcSPIE10918, 109180I (2019).

[12] J E Northrup, C L Chua, Z Yang, T Wunderer, M Kneissl et al. Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells. Appl Phys Lett, 100, 021101(2012).

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Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, Jeongpil Park, Deyin Zhao, John D. Albrecht, Baxter Moody, Zhenqiang Ma, Weidong Zhou. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates[J]. Opto-Electronic Advances, 2020, 3(4): 190025-1

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Paper Information

Category: Original Article

Received: Jul. 3, 2019

Accepted: Oct. 7, 2019

Published Online: Jun. 1, 2020

The Author Email: Albrecht John D. (wzhou@uta.edu)

DOI:10.29026/oea.2020.190025

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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