Opto-Electronic Advances, Volume. 3, Issue 4, 190025-1(2020)
Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates
Fig. 1. The deep UV laser heterostructure grown on AlN substrate with MQWs directly exposed to the air.
Fig. 2. Pseudomorphic growth: High-resolution XRD reciprocal space map.
Fig. 3. Simulations of TE and TM mode profile in the heterostructure with 3, 15 and 21-period MQWs.
Fig. 4. Schematic experimental setup to measure the edge emission from the cleaved facets.
Fig. 5. AlGaN QW growth on bulk AlN substrates.
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Fig. 6. Peak emission intensities at different stripe excitation lengths for different pumping power densities. The onset of super-linearity after 0.5 mm excitation stripe length.
Fig. 7. Optical gain measurement.
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Fig. 8. Optically pumped laser emission measurement.
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Fig. 9. Polarization measurement (a) below threshold at 230 kW/cm2 and (b) above threshold at 350 kW/cm2.
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Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, Jeongpil Park, Deyin Zhao, John D. Albrecht, Baxter Moody, Zhenqiang Ma, Weidong Zhou. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates[J]. Opto-Electronic Advances, 2020, 3(4): 190025-1
Category: Original Article
Received: Jul. 3, 2019
Accepted: Oct. 7, 2019
Published Online: Jun. 1, 2020
The Author Email: Albrecht John D. (wzhou@uta.edu)