Opto-Electronic Advances, Volume. 3, Issue 4, 190025-1(2020)

Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

Akhil Raj Kumar Kalapala1... Dong Liu2, Sang June Cho2, Jeongpil Park2, Deyin Zhao1, John D. Albrecht4,*, Baxter Moody3, Zhenqiang Ma2 and Weidong Zhou1 |Show fewer author(s)
Author Affiliations
  • 1Department of Electrical and Computer Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
  • 2Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
  • 3HexaTech, Inc., 991 Aviation Parkway, Suite 800, Morrisville, North Carolina 27560, United States
  • 4Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, United States
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    Figures & Tables(10)
    The deep UV laser heterostructure grown on AlN substrate with MQWs directly exposed to the air.
    Pseudomorphic growth: High-resolution XRD reciprocal space map.
    Simulations of TE and TM mode profile in the heterostructure with 3, 15 and 21-period MQWs.
    Schematic experimental setup to measure the edge emission from the cleaved facets.
    AlGaN QW growth on bulk AlN substrates.(a) Photoluminescence spectra for different sets of QW designs with different numbers of QWs and different Al compositions shown in Table 1; and (b) Photoluminescence intensity for different sets of QWs.
    Peak emission intensities at different stripe excitation lengths for different pumping power densities. The onset of super-linearity after 0.5 mm excitation stripe length.
    Optical gain measurement.(a) Measured gain spectra at different pump power densities, and (b) peak net modal gain at different pump power densities.
    Optically pumped laser emission measurement.(a) Edge emission spectra measured from the cleaved facet at different pump power levels. (b) Measured L-L curve and FWHM at different pumping power densities.
    Polarization measurement (a) below threshold at 230 kW/cm2 and (b) above threshold at 350 kW/cm2.
    • Table 1. Structure information for different sets of QW designs with different numbers of QWs and different Al compositions.

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      Table 1. Structure information for different sets of QW designs with different numbers of QWs and different Al compositions.

      Sample# of QWsQWs composition AlxGa1-xNQBs composition AlxGa1-xNPeak wavelength (nm)Sample name
      S130.751234HT3761
      S2150.751234HT5198
      S3210.721234HT5294
      S4210.581251HT5439
      S5210.530.7273HT5630
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    Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, Jeongpil Park, Deyin Zhao, John D. Albrecht, Baxter Moody, Zhenqiang Ma, Weidong Zhou. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates[J]. Opto-Electronic Advances, 2020, 3(4): 190025-1

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    Paper Information

    Category: Original Article

    Received: Jul. 3, 2019

    Accepted: Oct. 7, 2019

    Published Online: Jun. 1, 2020

    The Author Email: Albrecht John D. (wzhou@uta.edu)

    DOI:10.29026/oea.2020.190025

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