In order to understand the material removal mechanism during wafer rotation grinding,the phase transformations on the ground silicon wafer surface were investigated by Raman microspectroscopy.The results existing the amorphous silicon(α-Si),Si-Ⅲ phase,Si-Ⅳ phase and Si-Ⅻ phase on the semi-fine and fine ground wafer surfaces indicate that the Si-Ⅰ phase has been transformed into ductile metal phase(Si-II phase) during grinding,and the Si-Ⅱ phase is ductile and easily be removed by ductile mode.There is no obvious polycrystalline silicon on the rough ground wafer surface,but very small amounts of α-Si is observed,these materials are removed by brittle mode.From rough grinding to fine grinding,the material removal mode changes from micro-fracture mode to ductile mode gradually.During the transition from rough grinding to semi-fine grinding,the ductile mode removal degree increases with the increasing phase transformation degree;the transition from semi-fine grinding to fine grinding,the ductile mode removal degree increases with the decreasing phase transformation degree.