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Journal of Semiconductors, Volume. 45, Issue 3, 032503(2024)

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Jin Sui1,2,3, Jiaxiang Chen1,2,3, Haolan Qu1,2,3, Yu Zhang1,2,3, Xing Lu4, and Xinbo Zou1、*
Author Affiliations
  • 1School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 2Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 3School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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    Jin Sui, Jiaxiang Chen, Haolan Qu, Yu Zhang, Xing Lu, Xinbo Zou. Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy[J]. Journal of Semiconductors, 2024, 45(3): 032503

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    Paper Information

    Category: Articles

    Received: Aug. 31, 2023

    Accepted: --

    Published Online: Apr. 24, 2024

    The Author Email: Zou Xinbo (XBZou)

    DOI:10.1088/1674-4926/45/3/032503

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology