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Journal of Semiconductors, Volume. 45, Issue 3, 032503(2024)

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Jin Sui1,2,3, Jiaxiang Chen1,2,3, Haolan Qu1,2,3, Yu Zhang1,2,3, Xing Lu4, and Xinbo Zou1、*
Author Affiliations
  • 1School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 2Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 3School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
  • 4School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
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    (Colour online) (a) A cross-section diagram of a GaN quasi-vertical SBD under experimentation. (b) Forward and reverse J–V characteristics at 300 K presented by logarithmic scale. Inset: forward J–V characteristics at 300 K in linear scale. (c) C–V characteristics at 300 K. Inset: 1/C2–V curve at 300 K.

    Fig. 1. (Colour online) (a) A cross-section diagram of a GaN quasi-vertical SBD under experimentation. (b) Forward and reverse J–V characteristics at 300 K presented by logarithmic scale. Inset: forward J–V characteristics at 300 K in linear scale. (c) C–V characteristics at 300 K. Inset: 1/C2–V curve at 300 K.

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    (Colour online) (a) Energy band diagrams of hole trap in GaN for (1) capture and (2) emission process. (b) Inverted temperature-scanning ODLTS spectra. (c) Arrhenius plot for hole trap H1. (d) Apparent trap concentration profile versus depletion region width.

    Fig. 2. (Colour online) (a) Energy band diagrams of hole trap in GaN for (1) capture and (2) emission process. (b) Inverted temperature-scanning ODLTS spectra. (c) Arrhenius plot for hole trap H1. (d) Apparent trap concentration profile versus depletion region width.

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    (Colour online) (a) Isothermal ODLTS spectra for scanning TW with fixed UR of −6 V and tp of 1 s from 315 to 343 K. (b) τe derived by isothermal ODLTS at different temperatures. (c) Arrhenius plot of trap H1 extracted from temperature-dependent τe.

    Fig. 3. (Colour online) (a) Isothermal ODLTS spectra for scanning TW with fixed UR of −6 V and tp of 1 s from 315 to 343 K. (b) τe derived by isothermal ODLTS at different temperatures. (c) Arrhenius plot of trap H1 extracted from temperature-dependent τe.

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    (Colour online) (a) Electric-field-dependent τe of trap H1 extracted from capacitance transient spectra from 315 to 329 K. The ln(ep) of trap H1 as a function of (b) E2 and (c) E1/2 from 315 to 329 K. Black dotted lines are linear fitting curves.

    Fig. 4. (Colour online) (a) Electric-field-dependent τe of trap H1 extracted from capacitance transient spectra from 315 to 329 K. The ln(ep) of trap H1 as a function of (b) E2 and (c) E1/2 from 315 to 329 K. Black dotted lines are linear fitting curves.

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    (Colour online) (a) Normalized capacitance transient amplitude as a function of tp. (b) Capacitance transient amplitude increases exponentially with tp. (c) τc from 315 to 343 K.

    Fig. 5. (Colour online) (a) Normalized capacitance transient amplitude as a function of tp. (b) Capacitance transient amplitude increases exponentially with tp. (c) τc from 315 to 343 K.

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    • Table 1. Comparison with other published comparable hole trap in n-GaN.

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      Table 1. Comparison with other published comparable hole trap in n-GaN.

      Eemi (eV)0.75[44]0.70[23]0.76[20]0.75 [This work]
      NA means not applicable in the table. *This trap is related to complexes of native defects with donor impurities.
      σp (cm2)9.5 × 10−17NA4.9 × 10−134.67 × 10−15
      NTa (cm−3)1.73 × 10149.6 × 1015NA2.67 × 1015
      ep–ENANANAPFE
      GrowthMOCVDHVPEMOCVDMOCVD
      MeasurementMCTS, 280 nmODLTS, 365 nmDLTSODLTS, 405 nm
      RemarkVGa relatedComplexes*Point defectPoint defect
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    Jin Sui, Jiaxiang Chen, Haolan Qu, Yu Zhang, Xing Lu, Xinbo Zou. Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy[J]. Journal of Semiconductors, 2024, 45(3): 032503

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    Paper Information

    Category: Articles

    Received: Aug. 31, 2023

    Accepted: --

    Published Online: Apr. 24, 2024

    The Author Email: Zou Xinbo (XBZou)

    DOI:10.1088/1674-4926/45/3/032503

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology