Optics and Precision Engineering, Volume. 16, Issue 4, 565(2008)

X-ray photoelectron spectroscopy of Ge1-xCx thin films prepared by RLVIP technique

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    References(6)

    [1] [1] LETTINGTON A H,WORT C J H,MONACHAN B C.Development and IR applications of GeC thin films[J].SPIE,1989,1112:156-161.

    [2] [2] MACKOWSKI J M,CIMMA B,PIGNARD R.Rain erosion behavior of germanium carbide films grown on Ge Substrates[J].SPIE,1992,1760:201-209.

    [6] [6] KUMAR S,TRODAHL H J.Thin films of amorphous germanium-carbon and germanium-nitrogen alloys prepared by activated reactive evaporation[J].Thin Solid Films,1990,193-194:72-76.

    [7] [7] VILCARROMERO J,MARQUES F C.XPS study of the chemical bonding in hydrogenated amorphous germanium -carbon alloys[J].Applied Physics A,2000,70:581-585.

    [9] [9] MOLL E,PLKER H K,HAAG W.United States,4,619,748[P].1986-10-28.

    [10] [10] VILCARROMERO J,MARQUES F C.ANDREU J.Bonding properties of rf-co-sputtering amorphous Ge-C films studied by X-ray photoelectron and Raman spectroseopies[J].Non-crystalline Solids,1998,227-230:427-431.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. X-ray photoelectron spectroscopy of Ge1-xCx thin films prepared by RLVIP technique[J]. Optics and Precision Engineering, 2008, 16(4): 565

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    Received: Aug. 9, 2007

    Accepted: --

    Published Online: Aug. 17, 2008

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