Photonics Research, Volume. 10, Issue 8, 1840(2022)

Multi-wavelength injection locked semiconductor comb laser Editors' Pick

Jia-Jian Chen1,2,3、†, Wen-Qi Wei1,2、†, Jia-Le Qin1,4, Bo Yang1, Jing-Zhi Huang1,4, Zi-Hao Wang1,2, Ting Wang1,2,5、*, Chang-Yuan Yu3, and Jian-Jun Zhang1,2,4,6、*
Author Affiliations
  • 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2Songshan Lake Materials Laboratory, Dongguan 523808, China
  • 3Department of Electronic and Information Engineering, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
  • 4School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
  • 5e-mail: wangting@iphy.ac.cn
  • 6e-mail: jjzhang@iphy.ac.cn
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    Figures & Tables(6)
    (a) Schematics of two types of lasers (InAs QD laser on GaAs/chirped InAs QD laser on Si) self-injection locked into multiple wavelengths via a PM-fiber-based external cavity. (b) Structure layout of InAs QD laser grown on standard GaAs substrate. (c) Structure layout of chirped InAs QD laser epitaxially grown on Si (001) substrate.
    (a) Optical comb spectrum of free-running InAs/GaAs QDLGS. Inset: measured single-channel optical linewidth. (b) Optical comb spectrum of self-injection locked InAs/GaAs QDLGS with narrowed optical linewidth. Insets: measured optical linewidth of self-injection locked comb lines. Optical spectra of (c) single peak injection locked, (d) second-order injection locked, (e) third-order injection locked, and (f) fifth-order injection locked lasers. Insets: zoom-in spectra of different orders of injection locked conditions, which match the y scale of the main panel.
    (a) Optical comb spectral evolution of InAs/GaAs QDLGS from free-running condition into multi-peak injection locking states (single peak to five peaks). Spectral mapping of FP laser diode under different feedback levels (−35 dB to −10 dB) for (b) dual-peak injection locking state, (c) three-peak injection locking state, and (d) four-peak injection locking state. (e) Spectral mapping of multi-peak injection locking states.
    Self-injection locking of chirped QDLSI. (a) Original optical spectrum of InAs QD laser on Si operated at injection current of 75 mA. (b) The multi-wavelength injection locked comb spectrum with 75 GHz comb spacing. Average optical linewidth of each comb line is approximately 20 kHz (red line). (c) The measured optical linewidth spectra of the original laser modes (top) and self-injection locked comb lines (bottom) via self-heterodyne method. The original optical linewidth of 14.6 MHz is narrowed to 23.93 kHz via the multi-wavelength injection locking technique. (d) The optical spectrum of InAs QD laser on Si operated at higher injection current of 125 mA with merged dual modes. (e) The multi-wavelength injection locked comb spectrum with 50 GHz comb spacing. Optical linewidth of each comb line ranges from 50 to 80 kHz (red line). (f) The measured optical linewidth spectra of original laser modes (top) and self-injection locked comb lines (bottom) both at driving current of 125 mA. The optical linewidths are 19 MHz and 53 kHz, respectively. (g) The optical spectral mapping against varied PMF loop length showing the relationship between FSR and effective PMF length. (h) RIN spectra of injection-locked comb source (blue) and injection-locked SSB up to 25 GHz.
    (a) Optical spectrum, (b) RF spectrum, and (c) wavelength stability diagram of unstable dual-peak injection locked QDLSI. (d) Optical spectrum, (e) RF spectrum, and (f) wavelength stability diagram of stable dual-peak injection locked QDLSI.
    • Table 1. Performance Comparison of Si-Based Comb Lasers

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      Table 1. Performance Comparison of Si-Based Comb Lasers

      Operation PrincipleConfigurationOptical LinewidthComb Spacing10 dB Bandwidth (nm)Ref.
      Passive mode-lockingIll-V-on-Si with extended Si cavity400 kHz100 MHz–1 GHz12[11]
      Passive mode-lockingIll-V-on-Si with extended SiN cavity200 kHz755 MHz3.27[12]
      Passive mode-lockingIll-V-on-Si with extended Si cavityN/A15.5 GHz25[44]
      Mono-wavelength self-injection lockinglll-V DFB laser/SiN ring resonator1.2 Hz30 GHz4[19]
      Mono-wavelength self-injection lockinglll-V FP laser/SiN ring resonator370 Hz12.5 GHzN/A[31]
      Mono-wavelength self-injection lockingIII V FP laser/SiN ring resonator186 kHz1.2 THzN/A[21]
      Mono-wavelength self-injection lockinglll-V DFB laser/SiN ring resonator1.1 kHz25 GHzN/A[22]
      Mono-wavelength self-injection lockingExternal cavity laser/lll-V DFB laser20 kHz14 GHzN/A[23]
      Multi-wavelength self-injection locking (this work)lll-V QD FP laser on Si/external Lyot filter20 kHz25–700 GHz (tunable)13 
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    Jia-Jian Chen, Wen-Qi Wei, Jia-Le Qin, Bo Yang, Jing-Zhi Huang, Zi-Hao Wang, Ting Wang, Chang-Yuan Yu, Jian-Jun Zhang, "Multi-wavelength injection locked semiconductor comb laser," Photonics Res. 10, 1840 (2022)

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    Paper Information

    Category: Silicon Photonics

    Received: Jan. 28, 2022

    Accepted: Jun. 8, 2022

    Published Online: Jul. 21, 2022

    The Author Email: Ting Wang (wangting@iphy.ac.cn), Jian-Jun Zhang (jjzhang@iphy.ac.cn)

    DOI:10.1364/PRJ.455165

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