[1] [1] Ma T,Shen Y B.Acta Photomica Sinica,2005,34(1):46～49

[2] [2] Kirk M,David F,Dean D. Die_scale wafer flatness 3D imaging across 20 mm with nanometer_scale resolution.Proc SPIE,2002,4689:812～816

[3] [3] Maarten J J,Han H,Peter H J S. A scanning wafer thickness and flatness interferometer. SPIE,2004,5252:334～345

[4] [4] van den BrinkM A,Stoeldraijer J M D,Linders H F D.Overlay and field by field leveling in wafer steppers usingan advanced metrology system. SPIE,1992,1673: 330～344

[5] [5] Shi W J,Wang X Z,Zhang D Q. Application of BP-Neural networks in the FOCAL technique. SPIE,2005,5645:233～239

[6] [6] Bert V,Barbra H,Hans B. ArF step and scan system with 0.75 NA for the 0.10μm node. SPIE,2001,4346:634～650

[7] [7] Thomas E A. Application of latent image metrology in microlithography. SPIE,1991,1464:294～312

[8] [8] Zhang D Q,Wang X Z,Shi W J. A new method to determine the energy rangefor the FOCAL technique.SPIE,2005,5645:180～187

[9] [9] Born M,Wolf E. Principle of Optics. Oxford: Pergamon Press,1980

[10] [10] Chris A Mack. PROLITH: a comprehensive optical lithography model. SPIE,1985,538:207～220

[11] [11] Bouwhuis G,Wittekoek S. Automatic alignment system for optical projection printing. IEEE Transactions on Electron Devices,1979,ED-26(4):723～733

[12] [12] Dirksen P,de Laat W,Megens H. Latent image metrology for production wafer steppers. SPIE,1995,2440:701～711

[13] [13] Peter D,Ruud P,Casper J. Focus and exposure dose determination using stepper alignment. SPIE,1996,2726:799～808

[14] [14] Amir W,David C,Ayelet M. Characterization of leveling modes on i-line stepper. SPIE,2000,4000:827～834