First demonstration of a self-aligned p-channel GaN back gate injection transistor

Yingjie Wang; Sen Huang; Qimeng Jiang; Jiaolong Liu; Xinhua Wang; Wen Liu; Liu Wang; Jingyuan Shi; Jie Fan; Xinguo Gao; Haibo Yin; Ke Wei; Xinyu Liu

doi:10.1088/1674-4926/24050027

Journal of Semiconductors, Volume. 45, Issue 11, 112502(2024)

First demonstration of a self-aligned p-channel GaN back gate injection transistor

Yingjie Wang^1,2, Sen Huang^1,2、*, Qimeng Jiang^1,2、**, Jiaolong Liu^1,2, Xinhua Wang^1,2, Wen Liu³, Liu Wang^1,2, Jingyuan Shi¹, Jie Fan¹, Xinguo Gao¹, Haibo Yin¹, Ke Wei¹, and Xinyu Liu^1,2

Author Affiliations

¹High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China

²School of Integrated Circuits, University of Chinese Academy of Sciences, Beijing 100049, China

³China School of Advanced Technology, Xi'an Jiaotong–Liverpool University, Suzhou 215123, China

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Yingjie Wang, Sen Huang, Qimeng Jiang, Jiaolong Liu, Xinhua Wang, Wen Liu, Liu Wang, Jingyuan Shi, Jie Fan, Xinguo Gao, Haibo Yin, Ke Wei, Xinyu Liu. First demonstration of a self-aligned p-channel GaN back gate injection transistor[J]. Journal of Semiconductors, 2024, 45(11): 112502

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Paper Information

Category: Research Articles

Received: May. 17, 2024

Accepted: --

Published Online: Dec. 23, 2024

The Author Email: Huang Sen (SHuang), Jiang Qimeng (QMJiang)

DOI:10.1088/1674-4926/24050027

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