Journal of Semiconductors, Volume. 45, Issue 11, 112502(2024)
First demonstration of a self-aligned p-channel GaN back gate injection transistor
Figures & Tables(4)
Fig. 1. (Color online) (a) The schematic view and SEM images of self-aligned p-channel GaN back gate injection transistors (SA-BGITs) with 2DEG as the gate; (b) schematic process flow of the SA-BGITs. (c) I−V curves of p-type Ohmic contacts and (d) n-type Ohmic contacts in the form of TLM patterned on the heterostructure.
Fig. 2. (Color online) (a) DC dual-sweep transfer curves of SA-BGITs (LG = 3 μm) measured at VDS of −1 V. (b) The increase in IG lead to an increase in power consumption in CL.
Fig. 3. (Color online) (a) Output characterizes of SA-BGITs (LG = 3 μm) measured at moderate gate bias. (b) Output characterizes of SA-BGITs with LG of 1 μm (purple), 2 μm (blue), and 3 μm (red). (c) The gate breakdown of SA-BGITs (LG = 3 μm).
Table 1. Benchmark of GaN-based p-FETs.
View tableView in ArticleTable 1. Benchmark of GaN-based p-FETs.
Affiliation ION/IOFF LG (μm) ID,MAX (mA/mm) SS (mV/dec) ΔVth (V) HKUST[ 27 ]107 2 8 230 < 0.1 MIT[ 31 ]102 0.2 100 800 − UND[ 32 ]106 2 4 1500 − HRL[ 33 ]106 0.5 1.65 304 − PKU[ 34 ]105 2 5.4 1500 1.1 XDU[ 35 ]102 2 1.2 1400 < 0.1 SUSTC[ 15 ]106 2 120 160 − SINANO-CAS[ 36 ]107 3 1.12 250 − IMECAS[ 20 ,37 ]106 2 4.9 107 0.7 This work 107 3 1.6 174 0.2 This work 102 1 9.9 − 0.1
Tools
Get Citation
Copy Citation Text
Yingjie Wang, Sen Huang, Qimeng Jiang, Jiaolong Liu, Xinhua Wang, Wen Liu, Liu Wang, Jingyuan Shi, Jie Fan, Xinguo Gao, Haibo Yin, Ke Wei, Xinyu Liu. First demonstration of a self-aligned p-channel GaN back gate injection transistor[J]. Journal of Semiconductors, 2024, 45(11): 112502
Paper Information
Category: Research Articles
Received: May. 17, 2024
Accepted: --
Published Online: Dec. 23, 2024
The Author Email: Huang Sen (SHuang), Jiang Qimeng (QMJiang)
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20