Spectroscopy and Spectral Analysis, Volume. 36, Issue 4, 1261(2016)

In Situ Raman Spectrum Peak Test of Monocrystalline Silicon Wafer under Quantitative Uniaxial Pressure

XIE Chao1... DU Jian-guo1, LIU Lei1, YI Li1, LIU Hong1, CHEN Zhi1 and LI Jing2 |Show fewer author(s)
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    References(12)

    [1] [1] Jamieson J C, Lawson A W, Nachtrieb N D. Review of Scientific Instrument, 1959, 30: 1016.

    [2] [2] Dunstan D J, Scherrer W. Review of Scientific Instrument, 1988, 59(4): 627.

    [3] [3] Bassett W A, Shen A W, Bucknum M, et al. Pure and Applied Geophysics, 1993, 141(2-4): 487.

    [4] [4] Silvera I F. Review of Scientific Instrument, 1999, 70(12): 4609.

    [5] [5] Evans W J, Yoo C S, Lee G W, et al. Review of Scientific Instrument, 2007, 78(7): 073904.1.

    [6] [6] Shinoda K, Noguchi N. Rev. Review of Scientific Instrument, 2008, 79(015101): 1.

    [7] [7] Mao H K, Xu J, Bell P M J. Journal of Geophysical Research, 1986, 91(B5): 4673.

    [8] [8] Bassett W A, Shen A W, Bucknum M. Review of Scientific Instrument, 1993, 64: 2340.

    [9] [9] Christian S, Martin A Z. American Mineralogist, 2000, 85: 1725.

    [10] [10] Kaltsas G, Nassiopoulos A G. Microelectronic Engineering, 1997, 35(1-4): 397.

    [11] [11] Ingrid D W. Semiconductor Science and Technology, 1996, 11(2): 139.

    [12] [12] Ingrid D W. Journal of Raman Spectroscopy, 1999, 30(10): 877.

    Tools

    Get Citation

    Copy Citation Text

    XIE Chao, DU Jian-guo, LIU Lei, YI Li, LIU Hong, CHEN Zhi, LI Jing. In Situ Raman Spectrum Peak Test of Monocrystalline Silicon Wafer under Quantitative Uniaxial Pressure[J]. Spectroscopy and Spectral Analysis, 2016, 36(4): 1261

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Received: May. 15, 2015

    Accepted: --

    Published Online: Dec. 20, 2016

    The Author Email:

    DOI:10.3964/j.issn.1000-0593(2016)04-1261-05

    Topics