[1] R R SIERGIEJ, R C CLARKE, S SRIRAM et al. Advances in SiC materials and devices: an industrial point of view. Materials Science and Engineering: B, 9(1999).

[2] J B CASADY, R W JOHNSON. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review. Solid State Electron, 1409(1996).

[3] L CHENG, J W PALMOUR, A K AGARWAL et al. Strategic overview of high-voltage SiC power device development aiming at global energy savings. Materials Science Forum, 1089(2014).

[4] E MORVAN, A KERLAIN, C DUA et al. Influence of material properties on wide-bandgap microwave power device characteristics. Materials Science Forum, 731(2003).

[5] Y N MAKAROV, D LITVIN, A VASILIEV et al. Sublimation growth of 4 and 6 inch 4H-SiC low defect bulk crystals in Ta (TaC) crucibles. Materials Science Forum, 101(2016).

[6] J W CHOI, J G KIM, B K JANG et al. Modified hot-zone design for large diameter 4H-SiC single crystal growth. Materials Science Forum, 18(2019).

[7] Y PENG, X F CHEN, J PENG et al. Study on the growth of high quality semi-insulating ϕ150 mm 4H-SiC single crystal. Journal of Synthetic Crystals, 1145(2016).

[8] X L YANG, X F CHEN, X J XIE et al. Growth of 8 inch conductivity type 4H-SiC single crystals. Journal of Synthetic Crystals, 1745(2022).

[9] Y F LOU, T C GONG, W ZHANG et al. Fabrication and characterizations of 8-inch n type 4H-SiC single crystal substrate. Journal of Synthetic Crystals, 2131(2022).

[10] G YANG, X S LIU, J J LI et al. Dislocations in 4H silicon carbide single crystals. Journal of Synthetic Crystals, 1673(2022).