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Journal of Inorganic Materials, Volume. 38, Issue 11, 1371(2023)

Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density

Xixi XIONG1... Xianglong YANG1,*, Xiufang CHEN1,*, Xiaomeng LI1, Xuejian XIE1, Guojie HU1, Yan PENG1, Guojian YU2, Xiaobo HU1, Yaohao WANG2 and Xiangang XU1 |Show fewer author(s)
Author Affiliations
  • 11. Institute of Novel Semiconductors, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 22. Guangzhou Summit Crystal Semiconductor Co., Ltd., Guangzhou 511458, China
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    8-inch conductive 4H-SiC single crystal substrate and corresponding BPD density distribution
    1. 8-inch conductive 4H-SiC single crystal substrate and corresponding BPD density distribution

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    Distribution of TSD density with 0.55 cm-2 and statistical distribution of TSD characteristic etch pits
    2. Distribution of TSD density with 0.55 cm-2 and statistical distribution of TSD characteristic etch pits

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    Xixi XIONG, Xianglong YANG, Xiufang CHEN, Xiaomeng LI, Xuejian XIE, Guojie HU, Yan PENG, Guojian YU, Xiaobo HU, Yaohao WANG, Xiangang XU. Fabrication of 8-inch N-type 4H-SiC Single Crystal Substrate with Low Dislocation Density[J]. Journal of Inorganic Materials, 2023, 38(11): 1371

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    Paper Information

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    Received: Jul. 18, 2023

    Accepted: --

    Published Online: Mar. 6, 2024

    The Author Email: YANG Xianglong (yangxl2016@sdu.edu.cn), CHEN Xiufang (cxf@sdu.edu.cn)

    DOI:10.15541/jim20230325

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology