Silicon carbide (SiC) has wide application in electric vehicles, rail transit, high voltage power transmission and transformation, photovoltaic, and 5G communication owing to its excellent physical and chemical properties. 8-inch SiC substrate has great potential in reducing unit cost of devices and increasing capacity supply, and has become an important technology development direction of the industry. Recently, Shandong University and Guangzhou Summit Crystal Semiconductor Co., Ltd. have made a major breakthrough in the control of dislocation defects in 8-inch SiC substrates. The 8-inch n-type 4H-SiC single crystal substrate with low dislocation density has been fabricated by physical vapor transport (PVT) method, of which the threading screw dislocation (TSD) density is 0.55 cm^-2, and the basal plane dislocation (BPD) density is 202 cm^-2.