Journal of Semiconductors, Volume. 44, Issue 12, 122001(2023)

Controllable growth of wafer-scale PdS and PdS2 nanofilms via chemical vapor deposition combined with an electron beam evaporation technique

Hui Gao1, Hongyi Zhou1, Yulong Hao2, Guoliang Zhou3, Huan Zhou1, Fenglin Gao1, Jinbiao Xiao1, Pinghua Tang1, and Guolin Hao1,4、*
Author Affiliations
  • 1School of Physics and Optoelectronics and Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan 411105, China
  • 2College of Physics and Technology & Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Guilin 541004, China
  • 3Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, UK
  • 4National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
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    Figures & Tables(5)
    (Color online) (a) Side and top views of the schematic crystal structures for PdS2 and PdS. (b) Schematic for the synthesis of PdS and PdS2 NFs.
    (Color online) (a) OM image of as-prepared PdS2 NF (the thickness of pre-deposited Pd ~1 nm). Inset: photograph of 2-inch wafer-scale PdS2 NF. (b) Raman spectrum of as-prepared PdS2 NF. (c) Raman intensity mapping (Ag mode) of PdS2 NF. Inset: corresponding OM image. (d) AFM image of PdS2 NF. (e) Corresponding surface potential image. (f) HRTEM image of PdS2 NF. Inset: corresponding SAED pattern. (g) EDS analysis of PdS2 NF. (h, i) XPS spectra of the PdS2 NF corresponding to Pd 3d and S 2p core level peaks, respectively.
    (Color online) (a) OM image of PdS−PdS2 hybrid NF (the thickness of pre-deposited Pd ~2 nm). (b) Corresponding AFM image. (c) Raman spectra taken from the red and black points marked in (a) corresponding to the PdS2 and PdS, respectively. (d) Raman intensity mapping (Ag mode) of PdS2 NF. Inset: corresponding OM image. (e) Raman intensity mapping (Bg mode) of PdS NF. (f) Statistical diagram of area ratio of PdS2 and PdS.
    (Color online) (a) OM image of as-grown PdS NF (the thickness of pre-deposited Pd ~10 nm). (b) Raman spectrum of as-prepared PdS NF. (c) Raman intensity mapping (Bg mode) of PdS NF. Inset: corresponding OM image. (d) AFM image of PdS NF. (e) Corresponding surface potential image. (f) Low-magnification TEM image of PdS NF. Inset: corresponding SAED pattern. (g) HRTEM image of the PdS NF. (h, i) XPS spectra of the PdS2 NF corresponding to Pd 3d and S 2p core level peaks, respectively.
    (Color online) (a) AFM image of the PdS2 NF grown on the SiO2/Si substrate. (b) Corresponding electrical current image of the PdS2 NF. (c) I–V curve of PdS2 NF. (d) ln(I/T2) verse V curve of PdS2 NF fitted by the thermonic emission model. (e) AFM image of the PdS NF. (f) Corresponding electrical current image of the PdS NF. (g) I–V curve of the PdS NF. (h) ln(I/T2) verse V curve of PdS NF fitted by the thermonic emission model.
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    Hui Gao, Hongyi Zhou, Yulong Hao, Guoliang Zhou, Huan Zhou, Fenglin Gao, Jinbiao Xiao, Pinghua Tang, Guolin Hao. Controllable growth of wafer-scale PdS and PdS2 nanofilms via chemical vapor deposition combined with an electron beam evaporation technique[J]. Journal of Semiconductors, 2023, 44(12): 122001

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    Paper Information

    Category: Articles

    Received: Jun. 11, 2023

    Accepted: --

    Published Online: Mar. 13, 2024

    The Author Email: Hao Guolin (GLHao)

    DOI:10.1088/1674-4926/44/12/122001

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