Chinese Optics Letters, Volume. 8, Issue 1, 119(2010)

Evolution of stress in evaporated silicon dioxide thin films

Ming Fang1,2, Dafei Hu1,2, and Jianda Shao1
Author Affiliations
  • 1Key Laboratory of Material Science and Technology for High Power Lasers, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Graduate School of Chinese Academy of Sciences, Beijing 100049, China
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    The evolution of stress in evaporated SiO<sub>2</sub>, used as optical coatings, is investigated experimentally through in situ stress measurement. A typical evolution pattern consisting of five subprocedures (thin film deposition, stopping deposition, cooling, venting the vacuum chamber, and exposing coated optics to the atmosphere) is put forward. Further investigations into the subprocedures reveal their features. During the deposition stage, the stresses are usually compressive and reach a stable state when the deposited film is thicker than 100 nm. An increment of compressive stress value is observed with the decrease of residual gas pressure or deposition rate. A very low stress of -20 MPa is formed in SiO<sub>2</sub> films deposited at 3×10<sup>-2</sup> Pa. After deposition, the stress increases slightly in the compressive direction and is subject to the stabilization in subsequent tens of minutes. In the process of venting and exposure, the compressive component increases rapidly with the admission of room air and then reaches saturation, followed by a logarithmic decrement of the compressive state in the succeeding hours. An initial discussion of these behaviors is given.

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    Ming Fang, Dafei Hu, Jianda Shao. Evolution of stress in evaporated silicon dioxide thin films[J]. Chinese Optics Letters, 2010, 8(1): 119

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    Paper Information

    Received: Mar. 31, 2009

    Accepted: --

    Published Online: Mar. 1, 2010

    The Author Email:

    DOI:10.3788/COL20100801.0119

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