Journal of Inorganic Materials, Volume. 38, Issue 12, 1405(2023)
[1] J ARNAULT, S SAADA, V RALCHENKO. CVD grown single crystal diamond: a review. Physica Status Solidi (RRL)-Rapid Research Letters(2022).
[2] Y ZHENG, L I CHENGMING, J LIU et al. Chemical vapor deposited diamond with versatile grades: from gemstone to quantum electronics. Frontiers of Materials Science(2022).
[3] K LIU, S ZHANG, V RALCHENKO et al. Tailoring of typical color centers in diamond for photonics. Advanced Materials(2021).
[4] K LIU, S ZHANG, B J LIU et al. Investigating the energetic band diagrams of oxygen-terminated CVD grown e6 electronic grade diamond. Carbon(2020).
[6] C S YAN, Y K VOHRA, H K MAO et al. Very high growth rate chemical vapor deposition of single-crystal diamond. Proceedings of the National Academy of Sciences of the United States of America, 12523(2002).
[7] M MUEHLE, J ASMUSSEN, M F BECKER et al. Extending microwave plasma assisted CVD SCD growth to pressures of 400 Torr. Diamond and Related Materials(2017).
[8] Q LIANG, C Y CHIN, J LAI et al. Enhanced growth of high quality single crystal diamond by microwave plasma assisted chemical vapor deposition at high gas pressures. Applied Physics Letters, 12523(2009).
[11] F SILVA, J ACHARD, O BRINZA et al. High quality, large surface area, homoepitaxial MPACVD diamond growth. Diamond & Related Materials, 683(2009).
[12] A GICQUEL, F SILVA, C ROND et al. Ultrafast deposition of diamond by plasma-enhanced CVD. Comprehensive Hard Materials(2014).
[14] H YAMADA, A CHAYAHARA, Y MOKUNO. Simplified description of microwave plasma discharge for chemical vapor deposition of diamond. Journal of Applied Physics(2007).
[15] J J SU, Y F LI, X L LI et al. A novel microwave plasma reactor with a unique structure for chemical vapor deposition of diamond films. Diamond and Related Materials(2014).
[16] M FÜNER, C WILD, P KOIDL. Simulation and development of optimized microwave plasma reactors for diamond deposition. Surface & Coatings Technology(1999).
[17] Y F LI, J J SU, Y Q LIU et al. Design of a new TM021 mode cavity type MPCVD reactor for diamond film deposition. Diamond and Related Materials(2014).
[19] A P BOLSHAKOV, V G RALCHENKO, G Y SHU et al. Single crystal diamond growth by MPCVD at subatmospheric pressures. Materials Today Communications(2020).
[20] A GICQUEL, N DERKAOUI, C ROND et al. Quantitative analysis of diamond deposition reactor efficiency. Chemical Physics(2012).
[21] M A LOBAEV, S A BOGDANOV, D B RADISHEV et al. Method of power density determination in microwave discharge, sustained in hydrogen-methane gas mixture. Diamond & Related Materials(2016).
[22] E V BUSHUEV, V YU YUROV, A P BOLSHAKOV et al. Express
[24] X WANG, P DUAN, Z CAO et al. Homoepitaxy growth of single crystal diamond under 300 torr pressure in the MPCVD system. Materials(2019).
[25] A B MUCHNIKOV, A L VIKHAREV, A M GORBACHEV et al. Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations. Diamond and Related Materials, 43(2010).
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Yicun LI, Xiaobin HAO, Bing DAI, Dongyue WEN, Jiaqi ZHU, Fangjuan GENG, Weiping YUE, Weiqun LIN.
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Received: Apr. 4, 2023
Accepted: --
Published Online: Mar. 6, 2024
The Author Email: DAI Bing (daibinghit@vip.126.com), LIN Weiqun (fred.lin@csl-vacuum.com)