Journal of Inorganic Materials, Volume. 38, Issue 12, 1405(2023)

Optimization Design of MPCVD Single Crystal Diamond Growth Based on Plasma Diagnostics

Yicun LI1... Xiaobin HAO1, Bing DAI1,*, Dongyue WEN1, Jiaqi ZHU1, Fangjuan GENG1, Weiping YUE2 and Weiqun LIN2,* |Show fewer author(s)
Author Affiliations
  • 11. School of Astronautics, Harbin Institute of Technology, Harbin 150000, China
  • 22. Shenzhen CSL Vacuum Science and Technology Co., LTD, Shenzhen 518000, China
  • show less
    References(25)

    [1] J ARNAULT, S SAADA, V RALCHENKO. CVD grown single crystal diamond: a review. Physica Status Solidi (RRL)-Rapid Research Letters(2022).

    [2] Y ZHENG, L I CHENGMING, J LIU et al. Chemical vapor deposited diamond with versatile grades: from gemstone to quantum electronics. Frontiers of Materials Science(2022).

    [3] K LIU, S ZHANG, V RALCHENKO et al. Tailoring of typical color centers in diamond for photonics. Advanced Materials(2021).

    [4] K LIU, S ZHANG, B J LIU et al. Investigating the energetic band diagrams of oxygen-terminated CVD grown e6 electronic grade diamond. Carbon(2020).

    [6] C S YAN, Y K VOHRA, H K MAO et al. Very high growth rate chemical vapor deposition of single-crystal diamond. Proceedings of the National Academy of Sciences of the United States of America, 12523(2002).

    [7] M MUEHLE, J ASMUSSEN, M F BECKER et al. Extending microwave plasma assisted CVD SCD growth to pressures of 400 Torr. Diamond and Related Materials(2017).

    [8] Q LIANG, C Y CHIN, J LAI et al. Enhanced growth of high quality single crystal diamond by microwave plasma assisted chemical vapor deposition at high gas pressures. Applied Physics Letters, 12523(2009).

    [11] F SILVA, J ACHARD, O BRINZA et al. High quality, large surface area, homoepitaxial MPACVD diamond growth. Diamond & Related Materials, 683(2009).

    [12] A GICQUEL, F SILVA, C ROND et al. Ultrafast deposition of diamond by plasma-enhanced CVD. Comprehensive Hard Materials(2014).

    [14] H YAMADA, A CHAYAHARA, Y MOKUNO. Simplified description of microwave plasma discharge for chemical vapor deposition of diamond. Journal of Applied Physics(2007).

    [15] J J SU, Y F LI, X L LI et al. A novel microwave plasma reactor with a unique structure for chemical vapor deposition of diamond films. Diamond and Related Materials(2014).

    [16] M FÜNER, C WILD, P KOIDL. Simulation and development of optimized microwave plasma reactors for diamond deposition. Surface & Coatings Technology(1999).

    [17] Y F LI, J J SU, Y Q LIU et al. Design of a new TM021 mode cavity type MPCVD reactor for diamond film deposition. Diamond and Related Materials(2014).

    [19] A P BOLSHAKOV, V G RALCHENKO, G Y SHU et al. Single crystal diamond growth by MPCVD at subatmospheric pressures. Materials Today Communications(2020).

    [20] A GICQUEL, N DERKAOUI, C ROND et al. Quantitative analysis of diamond deposition reactor efficiency. Chemical Physics(2012).

    [21] M A LOBAEV, S A BOGDANOV, D B RADISHEV et al. Method of power density determination in microwave discharge, sustained in hydrogen-methane gas mixture. Diamond & Related Materials(2016).

    [22] E V BUSHUEV, V YU YUROV, A P BOLSHAKOV et al. Express in situ measurement of epitaxial CVD diamond film growth kinetics. Diamond and Related Materials(2017).

    [24] X WANG, P DUAN, Z CAO et al. Homoepitaxy growth of single crystal diamond under 300 torr pressure in the MPCVD system. Materials(2019).

    [25] A B MUCHNIKOV, A L VIKHAREV, A M GORBACHEV et al. Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations. Diamond and Related Materials, 43(2010).

    Tools

    Get Citation

    Copy Citation Text

    Yicun LI, Xiaobin HAO, Bing DAI, Dongyue WEN, Jiaqi ZHU, Fangjuan GENG, Weiping YUE, Weiqun LIN. Optimization Design of MPCVD Single Crystal Diamond Growth Based on Plasma Diagnostics[J]. Journal of Inorganic Materials, 2023, 38(12): 1405

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Apr. 4, 2023

    Accepted: --

    Published Online: Mar. 6, 2024

    The Author Email: DAI Bing (daibinghit@vip.126.com), LIN Weiqun (fred.lin@csl-vacuum.com)

    DOI:10.15541/jim20230164

    Topics