[1] ZHANG L, YU J, HAO X et al. Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate[J]. Scientific Reports, 4:, 4179(2014).

[3] LEE W, PARK M, LEE W et al. Characteristic comparison between GaN layer grown on c-plane cone shape patterned sapphire substrate and planar c-plane sapphire substrate by HVPE[J]. Journal of Crystal Growth, 493:, 8(2018).

[4] LEE M, AHNC W, VUTK O et al. First observation of electronic trap levels in freestanding GaN crystals extracted from Si substrates by hydride vapour phase epitaxy[J]. Scientific Reports, 7128(2019).

[5] TAMURA K, OHTOMO A, SAIKUSA K et al. Epitaxial growth of ZnO films on lattice-matched ScAlMgO₄ (0001) substrates[J]. Journal of Crystal Growth, 214-215:, 59(2000).

[6] RAMIREZ P. Oxide electronics emerge[J]. Science, 315:, 1377(2007).

[7] OBATA T, TAKAHASHI R, OHKUBO I et al. Epitaxial ScAlMgO₄ (0001) films grown on sapphire substrates by flux- mediated epitaxy[J]. Applied Physics Letters, 191910(2006).

[8] KATASE T, NOMURA K, OHTA H et al. Fabrication of ScAlMgO₄ epitaxial thin films using ScGaO₃(ZnO)_m buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth[J]. Thin Solid Films, 5842(2008).

[9] YANAGIDA T, KOSHIMIZU M, KAWANO N et al. Optical and scintillation properties of ScAlMgO₄ crystal grown by the floating zone method[J]. Materials Research Bulletin, 95:, 409(2017).

[10] NOBORU K, TAKAHIKO M, MASAKI N. Compounds which have InFeO₃(ZnO)_m-type structures (m= integer)[J]. Journal of Solid State Chemistry, 81:, 70(1989).

[11] GRAJCZYK R, SUBRAMANIAN M. Structure-property relationships of YbFe₂O₄- and Yb₂Fe₃O₇-type layered oxides: a bird's eye view[J]. Progress in Solid State Chemistry, 37(2015).

[12] AKEN B, MEETSMA A, PALSTRA T[J]. Structural view of hexagonal non-perovskite AMnO3(2001).

[13] VAN A, MEETSMA A, PALSTRA T. Hexagonal YMnO₃[J]. Acta Crystallographica Section C, 230(2001).

[14] MIZOGUCHI H, SLEIGHT A, SUBRAMANIAN M. New oxides showing an intense blue color based on Mn³⁺ in trigonal- bipyramidal coordination[J]. Inorganic Chemistry, 10(2011).

[15] KATASE T, NOMURA K, OHTA H et al. Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO₄[J]. Materials Science and Engineering: B, 66(2009).

[16] SCHMITZ O, HORST K. Über eine neue klasse quarternärer oxide von typus M^IIM^IIIInO₄. die lichtabsorption des 2-wertigen kupfers, nickels und kobalts sowie des 3-wertigen chroms[J]. Journal of Inorganic and General Chemistry, 252(1965).

[17] KATO K, KAWADA I, KIMIZUKA N et al. Die Kristallstruktur von YbFe₂O₄[J]. Zeitschrift für Kristallographie-Crystalline Materials, 314(1975).

[18] GÉRARDIN R, ALEBOUYEH A, JEANNOT F et al. Sur l'existence des oxydes rhomboe driques A(III)B(II)B(III)O₄[J]. Materials Research Bulletin, 647(1980).

[19] NOBORU K, AKIJI Y, HARUO O et al. The stability of the phases in the Ln₂O₃-FeO-Fe₂O₃ systems which are stable at elevated temperatures (Ln: Lanthanide elements and Y)[J]. Journal of Solid State Chemistry, 65(1983).

[20] NESPOLO M, SATO A, OSAWA T et al. Synthesis, crystal structure and charge distribution of InGaZnO₄. X-ray diffraction study of 20 kB single crystal and 50 kB twin by reticular merohedry[J]. Crystal Research and Technology, 151(2000).

[21] MURAT A, MEDVEDEVA J E. Electronic properties of layered multicomponent wide-band-gap oxides: a combinatorial approach[J]. Physical Review B, 155101(2012).

[22] WALSH A, DA S, WEI S et al. Nature of the band gap of In₂O₃ revealed by first-principles calculations and X-ray spectroscopy[J]. Physical Review Letters, 167402(2008).

[23] WALSH A, DA F, WEI S. Origins of band-gap renormalization in degenerately doped semiconductors[J]. Physical Review B, 075211(2008).

[24] KÖRBER C, KRISHNAKUMAR V, KLEIN A et al. Electronic structure of In₂O₃ and Sn-doped In₂O₃ by hard X-ray photoemission spectroscopy[J]. Physical Review B, 165207(2010).

[25] WALSH A, DA S, WEI S. Multi-component transparent conducting oxides: progress in materials modelling[J]. Journal of Physics-Condensed Matter, 334210(2011).

[26] HUDA M, YAN Y, WALSH A et al. Group-IIIA versus IIIB delafossites: electronic structure study[J]. Physical Review B, 035205(2009).

[27] SCANLON D, WALSH A, MORGAN B et al. Effect of Cr substitution on the electronic structure of CuAl_1-xCr_xO₂[J]. Physical Review B, 035101(2009).

[28] SCANLON D, WALSH A, WATSON G. Understanding the p-type conduction properties of the transparent conducting oxide CuBO₂: a density functional theory analysis[J]. Chemistry of Materials, 4568(2009).

[29] WALSH A, DA S, WEI S. Interplay between order and disorder in the high performance of amorphous transparent conducting oxides[J]. Chemistry of Materials, 5119(2009).

[30] WALSH A, CATLOW C. Structure, stability and work functions of the low index surfaces of pure indium oxide and Sn-doped indium oxide (ITO) from density functional theory[J]. Journal of Materials Chemistry, 10438(2010).

[31] TAMURA K, MAKINO T, TSUKAZAKI A et al. Donor-acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice- matched ScAlMgO₄ (0001) substrates[J]. Solid State Communications, 265(2003).

[32] MEDVEDEVA J, HETTIARACHCHI C. Tuning the properties of complex transparent conducting oxides: role of crystal symmetry, chemical composition, and carrier generation[J]. Physical Review B, 125116(2010).

[33] NOBORU K, TAKAHIKOM. Spinel, YbFe₂O₄, and Yb₂Fe₃O₇ types of structures for compounds in the In₂O₃ and Sc₂O₃-A₂O₃-BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000 ℃[J]. Journal of Solid State Chemistry, 382(1985).

[34] BYLANDER D, KLEINMAN L. Good semiconductor band gaps with a modified local-density approximation[J]. Physical Review B, 7868(1990).

[35] HELLMAN E, BRANDLE C, SCHNEEMEYER L et al. ScAlMgO₄: an oxide substrate for GaN epitaxy[J]. MRS Internet Journal of Nitride Semiconductor Research, 1:, U3(1996).

[36] IWANAGA H, KUNISHIGE A, TAKEUCHI S. Anisotropic thermal expansion in wurtzite-type crystals[J]. Journal of Materials Science, 35:, 2451(2000).

[37] SIMURA R, SUGIYAMA K, NAKATSUKA A et al. High-temperature thermal expansion of ScAlMgO₄ for substrate application of GaN and ZnO epitaxial growth[J]. Japanese Journal of Applied Physics, 099201(2016).

[38] TANG H, XU J, DONG Y et al. Study on growth and characterization of ScAlMgO₄ substrate crystal[J]. Journal of Alloys and Compounds, L43(2009).

[39] DE HAAS J, DORENBOS P. Advances in yield calibration of scintillators[J]. IEEE Transactions on Nuclear Science, 1086(2008).

[40] ABRAHAMS S, MARSH P, BRANDLE C. Laser and phosphor host La_1-xMgAl_11+xO₁₉ (x=0.050): crystal structure at 295 K[J]. The Journal of Chemical Physics, 4221(1986).

[41] CHAUD X, MESLIN S, NOUDEM J et al. Isothermal growth of large YBaCuO single domains through an artificial array of holes[J]. Journal of Crystal Growth, 855(2005).

[42] HANSKARL B. Über Oxoscandate. II. Zur Kenntnis des MgSc₂O₄[J]. Journal of Inorganic and General Chemistry, 113(1966).

[43] NANCY R. High pressure study of ScAlO₃ perovskite[J]. Physics and Chemistry of Minerals, 25:, 597(1998).

[44] ZAWRAH M, HAMAAD H, MEKY S. Synthesis and characterization of nano MgAl₂O₄ spinel by the co-precipitated method[J]. Ceramics International, 969(2007).

[45] TANG H, DONG Y, XU J et al. Study on the growth of lattice-matched ScAlMgO₄ substrate for GaN and ZnO based film epitaxy[J]. Journal of Synthetic Crystals, 612(2007).

[46] NOBORU K, TAKAHIKO M, YOSHIO M et al. Homologous compounds, InFeO₃(ZnO)_m (m=1-9)[J]. Journal of Solid State Chemistry, 98(1988).

[47] TANG H, DONG Y, XU J et al. Growth defects of ScAlMgO₄ crystal[J]. Journal of the Chinese Ceramic Society, 689(2008).

[48] FUKUDA T, SHIRAISHI Y, NANTO T et al. Growth of bulk single crystal ScAlMgO₄ boules and GaN films on ScAlMgO₄ substrates for GaN-based optical devices, high-power and high- frequency transistors[J]. Journal of Crystal Growth, 574:, 126286(2021).

[49] ISHIJI K, FUJII T, ARAKI T et al. Observation of defect structure in ScAlMgO₄ crystal using X-ray topography[J]. Journal of Crystal Growth, 580:, 136477(2022).

[50] YAO Y, HIRANO K, YAMAGUCHI H et al. A synchrotron X-ray topography study of crystallographic defects in ScAlMgO₄ single crystals[J]. Journal of Alloys and Compounds, 896:, 163025(2022).

[51] KARCH K, WAGNER M, BECHSTEDT F. Ab initio study of structural, dielectric, and dynamical properties of GaN[J]. Physical Review B, 7043(1998).

[52] ZOU J, KOTCHETKOV D, BALANDIN A et al. Thermal conductivity of GaN films: effects of impurities and dislocations[J]. Journal of Applied Physics, 2534(2002).

[53] STEPHEN P, FAN R. GaN electronics[J]. Advanced Materials, 1571(2000).

[54] LIU L, EDGAR J. Substrates for gallium nitride epitaxy[J]. Materials Science and Engineering R, 37:, 61(2002).

[55] WANG W, YANG W, WANG H et al. Epitaxial growth of GaN films on unconventional oxide substrates[J]. Journal of Materials Chemistry C, 9342(2014).

[56] WANG W, YAN T, YANG W et al. Effect of growth temperature on the properties of GaN epitaxial films grown on magnesium aluminate scandium oxide substrates by pulsed laser deposition[J]. Materials Letters, 183:, 382(2016).

[57] ERRANDONEA D, KUMAR R S, RUIZ-FUERTES J et al. High-pressure study of substrate material ScAlMgO₄[J]. Physical Review B, 144104(2011).

[58] OHNISHI K, KUBOYA S, TANIKAWA T et al. Reuse of ScAlMgO₄ substrates utilized for halide vapor phase epitaxy of GaN[J]. Japanese Journal of Applied Physics, SC1023(2019).

[59] FUKUI T, SAKAGUCHI T, MATSUDA Y et al. Metalorganic vapor phase epitaxy of GaN on 2 inch ScAlMgO₄ (0001) substrates[J]. Japanese Journal of Applied Physics, 090904(2022).

[60] UETA A, OHNO H, YANAGITA N et al. High quality nitride semiconductors grown on novel ScAlMgO₄ substrates and their light emitting diodes[J]. Japanese Journal of Applied Physics, SC1041(2019).

[61] WILLIAM M, JACQUES P. GaN growth on sapphire[J]. Journal of Crystal Growth, 178:, 168(1997).

[62] PAL S, JACOB C. Silicon-a new substrate for GaN growth[J]. Bulletin of Materials Science, 501(2004).

[63] DING S A, BARMAN S R, HORN K et al. Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy[J]. Applied Physics Letters, 2407(1997).

[64] FAUGIER J, LAZAR F, MARICHY C et al. Influence of the lattice mismatch on the atomic ordering of ZnO grown by atomic layer deposition onto single crystal surfaces with variable mismatch (InP, GaAs, GaN, SiC)[J]. Condensed Matter, 3(2017).

[65] OHTOMO A, TAMURA K, SAIKUSA K. Single crystalline ZnO films grown on lattice-matched ScAlMgO₄(0001) substrates[J]. Applied Physics Letters, 2635(1999).

[66] HASSAN J J, MAHDI M A, RAMIZY A et al. Fabrication and characterization of ZnO nanorods/p-6H-SiC heterojunction LED by microwave-assisted chemical bath deposition[J]. Superlattices and Microstructures, 53:, 31(2013).

[67] ZHU J, LIN B, SUN X et al. Heteroepitaxy of ZnO film on Si(111) substrate using a 3C-SiC buffer layer[J]. Thin Solid Films, 218(2005).

[68] DEHM G, INKSON B, WAGNER T. Growth and microstructural stability of epitaxial Al films on (0001) α-Al₂O₃ substrates[J]. Acta Materialia, 50:, 5021(2002).

[69] STOCKMEIER M, SAKWE S A, HENS P et al. Thermal expansion coefficients of 6H silicon carbide[J]. Materials Science Forum, 600-603:, 517(2008).

[70] MIDDELMANN T, WALKOV A, BARTL G et al. Thermal expansion coefficient of single-crystal silicon from 7 K to 293 K[J]. Physical Review B, 174113(2015).

[71] SOMA T, SATOH J, MATSUO H. Thermal expansion coefficient of GaAs and InP[J]. Solid State Communications, 889(1982).

[72] KURLOV V. Sapphire:Properties, Growth, and Applications[M]. Encyclopedia of Materials:Science and Technology, Elsevier Science Ltd., 8264(2001).

[73] LIU Z, MASUDA A, KONDO M. Investigation on the crystal growth process of spherical Si single crystals by melting[J]. Journal of Crystal Growth, 4116(2009).

[74] KAKIMOTO K, HIBIYA T. Temperature dependence of viscosity of molten GaAs by an oscillating cup method[J]. Applied Physics Letters, 1249(1987).

[75] ZHENG Q, LI C, RAI A et al. Thermal conductivity of GaN, ⁷¹GaN, and SiC from 150 K to 850 K[J]. Physical Review Materials, 014601(2019).

[76] SHIBATA H, WASEDA Y, OHTA H et al. High thermal conductivity of gallium nitride (GaN) crystals grown by HVPE process[J]. Materials Transactions, 2782(2007).

[77] GLASSBRENNER C, SLACK G. Thermal conductivity of silicon and Germanium from 3 K to the melting point[J]. Physical Review, A1058(1964).

[78] CARLSON R, SLACK G, SILVERMAN S. Thermal conductivity of GaAs and GaAs_1-xP_x laser semiconductors[J]. Journal of Applied Physics, 505(1965).

[79] LI G, WANG W, YANG W et al. Epitaxial growth of group III- nitride films by pulsed laser deposition and their use in the development of LED devices[J]. Surface Science Reports, 70:, 380(2015).

[80] WANG W, YANG W, LI G. Quality-enhanced GaN epitaxial films grown on (La, Sr)(Al, Ta)O₃ substrates by pulsed laser deposition[J]. Materials Letters, 168:, 52(2016).

[81] IWABUCHI T, KUBOYA S, TANIKAWA T et al. Ga-polar GaN film grown by MOVPE on cleaved ScAlMgO₄(0001) substrate with millimeter-scale wide terraces[J]. Physica Status Solidi A, 1600754(2017).

[82] FLORIDUZ A, MATIOLI E. Direct high-temperature growth of single-crystalline GaN on ScAlMgO₄ substrates by metalorganic chemical vapor deposition[J]. Japanese Journal of Applied Physics, 048002(2022).

[83] KIM T, MATSUKI N, OHTA J et al. Epitaxial growth of AlN on single-crystal Ni(111) substrates[J]. Applied Physics Letters, 121916(2006).

[84] CAI H, LIANG P, HÜBNER R et al. Composition and bandgap control of Al_xGa_1-xN films synthesized by plasma-assisted pulsed laser deposition[J]. Journal of Materials Chemistry C, 5307(2015).

[85] WANG W, YAN T, YANG W et al. Epitaxial growth of GaN films on lattice-matched ScAlMgO₄ substrates[J]. CrystEngComm, 4688(2016).

[86] ZHENG Y, WANG W, LI X et al. Polarity-controlled GaN epitaxial films achieved via controlling the annealing process of ScAlMgO₄ substrates and the corresponding thermodynamic mechanisms[J]. The Journal of Physical Chemistry C, 16161(2018).

[87] BORYSIEWICZ M. ZnO as a functional material: a review[J]. Crystals, 505(2019).

[88] KOZUKA Y, TSUKAZAKI A, KAWASAKI M. Challenges and opportunities of ZnO-related single crystalline heterostructures[J]. Applied Physics Reviews, 011303(2014).

[89] HALLIBURTON L, GILES N, GARCES N et al. Production of native donors in ZnO by annealing at high temperature in Zn vapor[J]. Applied Physics Letters, 172108(2005).

[90] KIM K, NIKI S, OH J et al. High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing[J]. Journal of Applied Physics, 066103(2005).

[91] MAKINO T, SEGAWA Y, TSUKAZAKI A et al. Electron transport in ZnO thin films[J]. Applied Physics Letters, 022101(2005).

[92] LOOK D. Recent advances in ZnO materials and devices[J]. Materials Science and Engineering, B80:, 383(2001).

[93] LOOK D, CLAFLIN B. P-type doping and devices based on ZnO[J]. Physica Status Solidi B, 624(2004).

[94] LOOK D, CLAFLIN B, ALIVOV Y I et al. The future of ZnO light emitters[J]. Physica Status Solidi A, 2203(2004).

[95] NEAL J, GILES N, YANG X et al. Evaluation of melt-grown, ZnO single crystals for use as alpha-particle detectors[J]. IEEE Transactions on Nuclear Science, 1397(2008).

[96] TSUKAZAKI A, OHTOMO A, ONUMA T et al. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO[J]. Nature Materials, 42(2004).

[97] WEN M C, YAN T, CHANG L et al. Achieving high MgO content in wurtzite ZnO epilayer grown on ScAlMgO₄ substrate[J]. Journal of Crystal Growth, 477:, 174(2017).

[98] TRINKLER L, AULIKA I, KRIEKE G et al. Characterization of wurtzite Zn_1-xMg_xO epilayers grown on ScAlMgO₄ substrate by methods of optical spectroscopy[J]. Journal of Alloys and Compounds, 912:, 165178(2022).

[99] TSUKAZAKI A, SAITO H, TAMURA K et al. Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and N[J]. Applied Physics Letters, 235(2002).

[100] MASASHI O, HIROMITSU K, TOSHINOBU Y. Sol-Gel preparation of ZnO films with extremely preferred orientation along (002) plane from zinc acetate solution[J]. Thin Solid Films, 306:, 78(1997).

[101] YUTAKA O, HISAO S, TOSHIMASA T et al. Microstructure of TiO₂ and ZnO films fabricated by the Sol-Gel method[J]. Journal of the American Ceramic Society, 79:, 825(1996).

[102] WESSLER B, STEINECKER A, MADER W. Epitaxial growth of ZnO thin films on ScAlMgO₄ (0001) by chemical solution deposition[J]. Journal of Crystal Growth, 242:, 283(2002).

[103] KATASE T, NOMURA K, OHTA H et al. Fabrication of atomically flat ScAlMgO₄ epitaxial buffer layer and low- temperature growth of high-mobility ZnO films[J]. Crystal Growth & Design, 1084(2010).