Journal of Inorganic Materials, Volume. 38, Issue 3, 228(2023)
Figures & Tables(16)
![Crystal structure of SCAM (a) and [ScO6] octahedran and [Al/MgO5] trigonal bipyramid (b)](/Images/icon/loading.gif){kind=icon}
1. Crystal structure of SCAM (a) and [ScO6] octahedran and [Al/MgO5] trigonal bipyramid (b)
6. XRD patterns of products from SCAM powders sintered at 1670 K for 168 h[45]
8. SCAM single crystal with various diameters grown by Cz method[48]
9. Dislocation analysis of SCAM crystal grown by Fukuda laboratory[50]
12. AFM images of the ~300 nm-thick GaN epitaxial films grown on SCAM substrates with different laser repetition rates[85]
13. GaN epitaxial films grown on SCAM substrate annealed under different atmospheres[86]
Table 1. Common substrates for GaN and ZnO epitaxial layers
View tableView in ArticleTable 1. Common substrates for GaN and ZnO epitaxial layers
Crystal GaN Sapphire 6H-SiC Si GaAs SCAM Space group $\text{P}{{6}_{3}}\text{mc}$ Lattice parameters a=b=0.319 nm c=0.519 nm α=β=90° γ=120° a=b=0.476 nm c=1.299 nm α=β=90° γ=120° a=b=0.307 nm c=1.508 nm α=β=90° γ=120° a=b=c=0.543 nm α=β=γ=90° a=b=c=0.565 nm α=β=γ=90° a=b=0.324 nm c=2.515 nm α=β=90° γ=120° Lattice mismatch, GaN 0 16%[ 61 ]3.3%[ 61 ]16%[ 62 ]20%[ 63 ]1.4%[ 5 ]ZnO 2.2%[ 64 ]18%[ 65 ]5.8%[ 66 ]16.6%[ 67 ]22%[ 64 ]0.09%[ 6 ]Thermal expansion coefficient, α (~300 K)/(×10-6, K-1) αa=3.43 αc=3.34[ 36 ]αa=7.5 αc=8.5[ 68 ]αa=3.2 αc=3.1[ 69 ]α=2.55[ 70 ]α=5.73[ 71 ]αa=5.59 αc=10.2[ 37 ]Melting point/K 2770[ 54 ]2326[ 72 ]3100[ 69 ]1680[ 73 ]1500[ 74 ]2220[ 38 ]Thermal conductivity, λ (~300 K)/(W·cm-1·K-1) λc=2.2[ 75 ]λc=0.23[ 68 ]λc=4.3[ 76 ]λ=1.3[ 77 ]λ=0.55[ 78 ]λc=0.062[ 50 ]Growth methods HVPE MOCVD Cz, KY, EFG PVT Cz LEC, VB Cz Cost High Medium High Low Low Low
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Chaoyi ZHANG, Huili TANG, Xianke LI, Qingguo WANG, Ping LUO, Feng WU, Chenbo ZHANG, Yanyan XUE, Jun XU, Jianfeng HAN, Zhanwen LU.
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Received: Oct. 20, 2022
Accepted: --
Published Online: Oct. 16, 2023
The Author Email: TANG Huili (tanghl@tongji.edu.cn), XU Jun (15503@tongji.edu.cn)
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