Acta Photonica Sinica, Volume. 52, Issue 11, 1116001(2023)
Progress and Challenges of Efficient and Stable Halide-based Perovskite Solar Cells（Invited）
Figures & Tables(13)
Fig. 1. PSCs light-absorbing layer materials and power generation mechanism
Fig. 3. The types of defects on perovskite films and their passivation process through chemical bonds and inhibition process of ion migration［47］
Fig. 4. Different passivation strategies and performance characterization for ETL/perovskite interface in n-i-p structure PSCs
Fig. 5. Performance characterization of different passivation strategies at perovskite/PCBM interface
Fig. 6. Different passivation strategies and performance characterization for perovskite/HTL interface in n-i-p structure PSCs
Fig. 7. Different passivation strategies and performance characterization for additive precursor engineering
Fig. 8. Different passivation strategies and preparation processes for antisolvent engineering
Fig. 9. One-step laser process of doping Ta into TiO2 and crystallizing TiO2 film from amorphous precursor to anatase phase［76］
Fig. 10. Performance characterization of different SnO2 ETL dopants
Fig. 12. Performance characterization of different HTL dopants in planar n-i-p structure PSCs
Table 1. The passivators used in different PSCs passivation strategies in the past year and the performance comparison before and after passivation
View tableView in ArticleTable 1. The passivators used in different PSCs passivation strategies in the past year and the performance comparison before and after passivation
Strategy Passivator Processing VOC/V JSC/（mA·cm-2） FF/% PCE/% Reference Interface engineering CF3PhAI Control 1.168 24.41 80.04 22.82 ［ 83 ］Passivated 1.172 24.48 80.40 23.06 Interface engineering 2C60-Bphen Control 1.110 21.80 80.00 19.65 ［ 84 ］Passivated 1.110 22.70 80.06 20.24 Interface engineering CFA Control 1.140 25.77 76.26 22.40 ［ 85 ］Passivated 1.170 25.79 77.77 23.47 Interface engineering Cl-BSM Control 1.020 24.30 77.86 19.30 ［ 86 ］Passivated 1.120 24.60 81.36 22.42 Interface engineering DEP Control 1.130 23.76 78.34 21.14 ［ 87 ］Passivated 1.170 24.19 81.91 23.21 Interface engineering DL Control 1.140 24.99 79.45 22.62 ［ 88 ］Passivated 1.200 25.21 83.48 25.24 Interface engineering FBA Control 1.087 25.21 81.32 22.28 ［ 89 ］Passivated 1.135 25.32 84.40 24.26 Interface engineering MSP Control 1.140 24.89 76.90 21.86 ［ 90 ］Passivated 1.180 25.04 78.90 23.29 Interface engineering NiAc2 Control 1.120 23.70 79.39 21.07 ［ 91 ］Passivated 1.150 23.82 81.88 23.02 Interface engineering PV-I Control 1.050 23.73 77.40 19.41 ［ 92 ］Passivated 1.110 24.69 80.20 22.02 Interface engineering SnO2 Control 1.106 25.71 77.68 22.09 ［ 93 ］Passivated 1.158 26.06 79.02 23.86 Interface engineering TDA Control 1.170 24.91 77.63 22.61 ［ 94 ］Passivated 1.200 25.11 82.75 24.96 Interface engineering CzEAI Control 1.140 24.95 78.42 22.31 ［ 95 ］Passivated 1.200 25.41 79.22 24.14 Interface engineering BPCSA Control 1.060 22.77 78.93 19.07 ［ 96 ］Passivated 1.100 25.60 83.28 23.45 Interface engineering p-F-PEAI Control 1.072 23.56 83.55 21.20 ［ 97 ］Passivated 1.124 24.04 84.98 22.93 Interface engineering PMMA Control 1.190 22.54 78.65 21.14 ［ 98 ］Passivated 1.290 22.48 77.49 22.47 Interface engineering BAI Control 1.120 26.04 78.9 23.02 ［ 99 ］Passivated 1.159 26.01 83.9 25.32 Interface engineering CLPU Control 1.045 25.46 81.23 21.63 ［ 100 ］Passivated 1.111 25.68 81.06 23.14 Interface engineering PAH Control 1.120 25.30 74.00 21.10 ［ 101 ］Passivated 1.180 25.60 81.40 24.60 Interface engineering TMBAI Control 1.110 24.90 76.30 21.10 ［ 102 ］Passivated 1.170 25.30 80.20 23.70 Perovskite surface treatment ［4MBP］Cl Control 1.110 26.28 83.10 24.24 ［ 103 ］Passivated 1.151 26.29 83.40 25.24 Perovskite surface treatment HCOOK Control 1.110 24.80 76.70 21.10 ［ 104 ］Passivated 1.150 25.50 81.00 23.80 Perovskite surface treatment MAFa Control 1.091 24.70 76.53 20.62 ［ 105 ］Passivated 1.181 24.99 81.62 24.09 Perovskite surface treatment NVP Control 1.151 25.21 78.94 22.91 ［ 106 ］Passivated 1.195 25.77 80.19 24.69 Perovskite surface treatment POF-HDDA Control 1.131 25.09 78.50 22.28 ［ 107 ］Passivated 1.201 25.72 80.13 24.76 Perovskite surface treatment PAEMI-TFSI Control 1.080 24.00 79.28 20.54 ［ 108 ］Passivated 1.140 24.06 81.81 22.40 Perovskite surface treatment PBGCl Control 1.134 25.57 78.08 22.66 ［ 109 ］Passivated 1.164 25.63 82.65 24.67 Perovskite surface treatment PEA2PbI4@MACl Control 0.980 23.35 70.80 16.22 ［ 110 ］Passivated 1.165 24.75 82.20 23.69 Perovskite surface treatment SnOx Control 0.820 30.40 76.71 19.16 ［ 111 ］Passivated 0.880 31.42 79.76 22.16 Dopant passivation PbS QDs Control 1.110 22.65 79.90 20.08 ［ 112 ］Passivated 1.150 24.86 81.20 23.27 Dopant passivation RbCl@tBBAI Control 1.100 23.84 78.52 20.54 ［ 113 ］Passivated 1.160 24.50 79.04 22.54 Dopant passivation STRS Control 1.134 23.82 76.20 20.61 ［ 114 ］Passivated 1.160 24.50 80.50 22.89 Dopant passivation OATFSI Control 1.033 25.60 80.30 21.23 ［ 115 ］Passivated 1.084 25.45 84.60 23.34 Dopant passivation LQ Control 1.117 25.17 74.78 21.03 ［ 116 ］Passivated 1.151 25.63 82.76 24.42
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Kun HE, Xiaoliang ZHAO, Jun WANG, Bixin LI, Bin DU, Yanlong WANG. Progress and Challenges of Efficient and Stable Halide-based Perovskite Solar Cells（Invited）[J]. Acta Photonica Sinica, 2023, 52(11): 1116001
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Received: May. 12, 2023
Accepted: Jun. 28, 2023
Published Online: Dec. 22, 2023
The Author Email: LI Bixin (jkylbxin@hnfnu.edu.cn), DU Bin (dubin@xpu.edu.cn), WANG Yanlong (wangyanlong@dicp.ac.cn)
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