Infrared and Laser Engineering, Volume. 48, Issue 3, 320001(2019)

Investigation of single event transients on SiGe BiCMOS linear devices with pulsed laser

An Heng, Zhang Chenguang, Yang Shengsheng, Xue Yuxiong, Wang Guangyi, and Wang Jun
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    References(13)

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    [5] [5] Chugg A, Jones R, Moutrie M, et al. Probing the charge-collection sensitivity profile using a picosecond pulsed laser at a range of wavelength[J]. IEEE Transactions on Nuclear Science, 2002, 49(6): 2969-2976.

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    [7] [7] Pease R L, Sternberg A L, Boulghassoul Y, et al. Comparison of SET′s in bipolar linear circuits generated with an ion microbeam, laser light and circuit simulation[J]. IEEE Transactions on Nuclear Science, 2002, 49(6): 3163-3170.

    [8] [8] Wang Dekun, Cao Zhou, Liu Hainan, et al. Backside piuse laser testing for single event effect[J]. Atomic Energy Science and Technology, 2011, 45(7): 884-887.(in Chinese)

    [9] [9] Egorov A N, Chumakov A I, Mavritskiy O B, et al. Femtosecond laser simulation facility for SEE IC testing[C]// 2014 IEEE Radiation Effects Data Workshop Record, 2014: 247-250.

    [10] [10] Gordienko A V, Mavritskii O B, Egorov A N, et al. Correlation of the ionisation response at selected points of IC sensitive regions with SEE sensitivity parameters under pulsed laser irradiation[J]. Quantum Electronics, 2014, 44(12): 1173-1178.

    [11] [11] Armstrong S E, Loveless T D, Hicks J R, et al. Phase-dependent single-event sensitivity analysis of high-speed A/MS circuits extracted from asynchronous measurements[J]. IEEE Transactions on Nuclear Science, 2010, 58(6): 1066-1071.

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    An Heng, Zhang Chenguang, Yang Shengsheng, Xue Yuxiong, Wang Guangyi, Wang Jun. Investigation of single event transients on SiGe BiCMOS linear devices with pulsed laser[J]. Infrared and Laser Engineering, 2019, 48(3): 320001

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    Paper Information

    Category: 光电器件及应用

    Received: Oct. 12, 2018

    Accepted: Nov. 29, 2018

    Published Online: Apr. 6, 2019

    The Author Email:

    DOI:10.3788/irla201948.0320001

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