Infrared and Laser Engineering, Volume. 48, Issue 3, 320001(2019)
Investigation of single event transients on SiGe BiCMOS linear devices with pulsed laser
Figures & Tables(0)
Tools
Get Citation
Copy Citation Text
An Heng, Zhang Chenguang, Yang Shengsheng, Xue Yuxiong, Wang Guangyi, Wang Jun. Investigation of single event transients on SiGe BiCMOS linear devices with pulsed laser[J]. Infrared and Laser Engineering, 2019, 48(3): 320001
Paper Information
Category: 光电器件及应用
Received: Oct. 12, 2018
Accepted: Nov. 29, 2018
Published Online: Apr. 6, 2019
The Author Email:
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20