Acta Optica Sinica, Volume. 42, Issue 17, 1716001(2022)

Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications

Zhizhen Ye1,2、*, Fengzhi Wang1,2, Fang Chen2, and Yangdan Lu1
Author Affiliations
  • 1School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, Zhejiang, China
  • 2Institute of Wenzhou, Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Zhejiang University, Wenzhou 325006, Zhejiang, China
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    Figures & Tables(12)
    p-ZnO thin films and LED devices prepared by MOCVD method[4]. (a) Schematic sketch of ZnO LED; (b) I-V characteristics of ZnO LED; (c) electroluminescence spectra of LED as a function of injected current at room temperature
    Schematic diagrams of band structures. (a) ZnMgO/ZnO[7];(b)ZnMgO/ZnMgBeO[11]
    PL intensity obtained by adjusting well width and barrier height of ZnO/ZnMgO multi-quantum wells. (a) PL intensity at 16 K; (b) PL intensity at room temperature; (c) normalized PL intensity
    PL intensity of ZnO/ZnMgO multi-quantum wells with high internal quantum efficiency. (a) PL spectrum at 80 K of ZnO/Zn0.9Mg0.1O MQWs grown on GaN/Al2O3 substrate (inset shows integrated PL intensity of LE emission for MQWs as a function of temperature); (b) PL spectra at 300 K and 15 K of the ZnO/Zn0.9Mg0.1O MQWs grown on sapphire substrate
    Band structure of ZnO
    Results of perovskite luminescence. (a)(d) Statistical results of electroluminescence (EL) spectrum and external quantum efficiency (EQE) of red perovskite film LED[117]; (b)(e) statistical results of EL spectrum and maximum EQE of green perovskite film LED[118]; (c)(f) statistical results of EL spectrum and maximum EQE of sky blue perovskite film LED[107]
    ASE results of perovskite thin films. (a)(e) ASE results of green perovskite thin films with PMMA surface passivation[120]; (b)(f) ASE results of green perovskite thin films passivated in bottom and surface layers[121]; (c) ASE results of green light perovskite thin films after optimization of crystal morphology[122]; (d) ASE results of blue perovskite films; (g) ASE excitation results of red-green perovskite thin films; (h) ASE results of blue-green perovskite thin films[123]
    Band structure, gap width, and absorption and fluorescence spectra of perovskite CsPbX3. (a) Schematic diagram of CsPbX3 band structure of perovskite[124]; (b) schematic diagram of gap width of MAPbX3[126]; (c) composition dependent light absorption and fluorescence spectra of CsPbX3 nanocrystalline halogen[129]
    Luminescence properties of pure brominated perovskite nanoparticles and corresponding devices. (a) Low-power TEM and solution diagram of ultra-small CsPbBr3 blue quantum dots of electrostatic double shell [133]; (b)(c) TEM and EL spectra of ultra-small CsPbBr3 blue quantum dots after etching and ligand exchange treatment[134]; (d) TEM image of CsPbBr3 nanosheets[135]; (e)(f) performance diagram of LED device with CsPbBr3 nanosheet as luminescent layer
    Luminescence properties of pure brominated quasi-two-dimensional perovskite nanoparticles and corresponding devices. (a) Schematic diagram of quasi-two-dimensional perovskite structure and energy transfer[139]; (b) schematic diagram of arrangement of different spacer molecules in quasi-two-dimensional perovskite[140]; (c)(d) effect of coexistence of two spacer molecules on n value distribution and EL spectra of quasi-two-dimensional perovskite[141]; (e)-(g) spectral contrast and LED performance before and after passivation of quasi-two-dimensional perovskite [142]
    Luminescence properties of mixed halogen-based perovskite nanoparticles and corresponding devices. (a) Fluorescence and UV-visible absorption spectra of chlorobromine mixed perovskite quantum dot solution after ligand passivation[151]; (b) schematic diagram of surface defect passivation of chloro-bromine mixed perovskite quantum dots[152]; (c) luminescence diagram of different content Ni+ doped chloro-bromine mixed perovskite quantum dots[153]; (d)(e) comparison of LED performance of chloro-bromine mixed perovskite quantum dots before and after Ni+ doping[153]
    Luminescence properties of mixed halogen-based perovskite and corresponding devices. (a) Schematic diagram of passivation of quasi-two-dimensional perovskite ligand[174]; (b) effect of different spacer molecules on n value of two-dimensional perovskite[175]; (c) schematic diagram of quasi-two-dimensional perovskite LED devices prepared by different spacer molecules[176]; (d) schematic diagram of quasi-two-dimensional perovskite bandgap width with different chloro-bromine ratios[180]
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    Zhizhen Ye, Fengzhi Wang, Fang Chen, Yangdan Lu. Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications[J]. Acta Optica Sinica, 2022, 42(17): 1716001

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    Paper Information

    Category: Materials

    Received: Jun. 10, 2022

    Accepted: Jul. 14, 2022

    Published Online: Sep. 16, 2022

    The Author Email: Ye Zhizhen (yezz@zju.edu.cn)

    DOI:10.3788/AOS202242.1716001

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