Acta Optica Sinica, Volume. 42, Issue 17, 1716001(2022)
Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications
Fig. 1. p-ZnO thin films and LED devices prepared by MOCVD method[4]. (a) Schematic sketch of ZnO LED; (b) I-V characteristics of ZnO LED; (c) electroluminescence spectra of LED as a function of injected current at room temperature
Fig. 3. PL intensity obtained by adjusting well width and barrier height of ZnO/ZnMgO multi-quantum wells. (a) PL intensity at 16 K; (b) PL intensity at room temperature; (c) normalized PL intensity
Fig. 4. PL intensity of ZnO/ZnMgO multi-quantum wells with high internal quantum efficiency. (a) PL spectrum at 80 K of ZnO/Zn0.9Mg0.1O MQWs grown on GaN/Al2O3 substrate (inset shows integrated PL intensity of LE emission for MQWs as a function of temperature); (b) PL spectra at 300 K and 15 K of the ZnO/Zn0.9Mg0.1O MQWs grown on sapphire substrate
Fig. 5. Band structure of ZnO
Fig. 6. Results of perovskite luminescence. (a)(d) Statistical results of electroluminescence (EL) spectrum and external quantum efficiency (EQE) of red perovskite film LED[117]; (b)(e) statistical results of EL spectrum and maximum EQE of green perovskite film LED[118]; (c)(f) statistical results of EL spectrum and maximum EQE of sky blue perovskite film LED[107]
Fig. 7. ASE results of perovskite thin films. (a)(e) ASE results of green perovskite thin films with PMMA surface passivation[120]; (b)(f) ASE results of green perovskite thin films passivated in bottom and surface layers[121]; (c) ASE results of green light perovskite thin films after optimization of crystal morphology[122]; (d) ASE results of blue perovskite films; (g) ASE excitation results of red-green perovskite thin films; (h) ASE results of blue-green perovskite thin films[123]
Fig. 8. Band structure, gap width, and absorption and fluorescence spectra of perovskite CsPbX3. (a) Schematic diagram of CsPbX3 band structure of perovskite[124]; (b) schematic diagram of gap width of MAPbX3[126]; (c) composition dependent light absorption and fluorescence spectra of CsPbX3 nanocrystalline halogen[129]
Fig. 9. Luminescence properties of pure brominated perovskite nanoparticles and corresponding devices. (a) Low-power TEM and solution diagram of ultra-small CsPbBr3 blue quantum dots of electrostatic double shell [133]; (b)(c) TEM and EL spectra of ultra-small CsPbBr3 blue quantum dots after etching and ligand exchange treatment[134]; (d) TEM image of CsPbBr3 nanosheets[135]; (e)(f) performance diagram of LED device with CsPbBr3 nanosheet as luminescent layer
Fig. 10. Luminescence properties of pure brominated quasi-two-dimensional perovskite nanoparticles and corresponding devices. (a) Schematic diagram of quasi-two-dimensional perovskite structure and energy transfer[139]; (b) schematic diagram of arrangement of different spacer molecules in quasi-two-dimensional perovskite[140]; (c)(d) effect of coexistence of two spacer molecules on n value distribution and EL spectra of quasi-two-dimensional perovskite[141]; (e)-(g) spectral contrast and LED performance before and after passivation of quasi-two-dimensional perovskite [142]
Fig. 11. Luminescence properties of mixed halogen-based perovskite nanoparticles and corresponding devices. (a) Fluorescence and UV-visible absorption spectra of chlorobromine mixed perovskite quantum dot solution after ligand passivation[151]; (b) schematic diagram of surface defect passivation of chloro-bromine mixed perovskite quantum dots[152]; (c) luminescence diagram of different content Ni+ doped chloro-bromine mixed perovskite quantum dots[153]; (d)(e) comparison of LED performance of chloro-bromine mixed perovskite quantum dots before and after Ni+ doping[153]
Fig. 12. Luminescence properties of mixed halogen-based perovskite and corresponding devices. (a) Schematic diagram of passivation of quasi-two-dimensional perovskite ligand[174]; (b) effect of different spacer molecules on n value of two-dimensional perovskite[175]; (c) schematic diagram of quasi-two-dimensional perovskite LED devices prepared by different spacer molecules[176]; (d) schematic diagram of quasi-two-dimensional perovskite bandgap width with different chloro-bromine ratios[180]
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Zhizhen Ye, Fengzhi Wang, Fang Chen, Yangdan Lu. Wide Band Gap Semiconductor Optoelectronic Materials and Their Applications[J]. Acta Optica Sinica, 2022, 42(17): 1716001
Category: Materials
Received: Jun. 10, 2022
Accepted: Jul. 14, 2022
Published Online: Sep. 16, 2022
The Author Email: Ye Zhizhen (yezz@zju.edu.cn)