Current-induced degradation and lifetime prediction of 310  nm ultraviolet light-emitting diodes

Jan Ruschel; Johannes Glaab; Batoul Beidoun; Neysha Lobo Ploch; Jens Rass; Tim Kolbe; Arne Knauer; Markus Weyers; Sven Einfeldt; Michael Kneissl

doi:10.1364/PRJ.7.000B36

Photonics Research, Volume. 7, Issue 7, B36(2019)

Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes

Jan Ruschel^1、*, Johannes Glaab¹, Batoul Beidoun¹, Neysha Lobo Ploch¹, Jens Rass¹, Tim Kolbe¹, Arne Knauer¹, Markus Weyers¹, Sven Einfeldt¹, and Michael Kneissl^1,2

Author Affiliations

¹Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

²Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin, Germany

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Jan Ruschel, Johannes Glaab, Batoul Beidoun, Neysha Lobo Ploch, Jens Rass, Tim Kolbe, Arne Knauer, Markus Weyers, Sven Einfeldt, Michael Kneissl, "Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes," Photonics Res. 7, B36 (2019)

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Paper Information

Special Issue: SEMICONDUCTOR UV PHOTONICS

Received: Feb. 20, 2019

Accepted: May. 14, 2019

Published Online: Jun. 21, 2019

The Author Email: Jan Ruschel (Jan.Ruschel@FBH-Berlin.de)

DOI:10.1364/PRJ.7.000B36

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology