[1] Shi W, Fu Z L. 2-kV and 1.5-kA semi-insulating GaAs photoconductive semiconductor switch[J]. IEEE Electron Device Letters, 34, 93-95(2013). http://scitation.aip.org/content/aip/journal/apl/92/4/10.1063/1.2838743

[2] Kirawanich P, Yakura S J, Islam N E. Study of high-power wideband terahertz-pulse generation using integrated high-speed photoconductive semiconductor switches[J]. IEEE Transactions on Plasma Science, 37, 219-228(2009). http://ieeexplore.ieee.org/document/4689364/

[3] Glover S F, Zutavern F J, Swalby M E et al. Pulsed- and DC-charged PCSS-based trigger generators[J]. IEEE Transactions on Plasma Science, 38, 2701-2707(2010). http://ieeexplore.ieee.org/document/5484420/

[4] Zhu S L, Zhao W, Liu B Y et al. Cavity dumped laser using fast GaAs photoconductive switch[J]. Chinese Journal of Lasers, 38, 0502003(2011).

[5] Shi W, Wang S Q, Ma C et al. Generation of an ultra-short electrical pulse with width shorter than the excitation laser[J]. Scientific Reports, 6, 27577(2016). http://europepmc.org/articles/PMC4897789

[6] Chen S Y, Wang G. High-field properties of carrier transport in bulk wurtzite GaN: a Monte Carlo perspective[J]. Journal of Applied Physics, 103, 023703(2008). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4946207

[7] Ehrentraut D, Meissner E, Bockowski M. Technology of gallium nitride crystal growth[M]. Berlin: Springer, 56-59(2010).

[8] Polyakov A Y, Smirnov N B, Govorkov A V et al. Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy[J]. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 25, 686-690(2007). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4975457

[9] Dumcenco D O, Levcenco S, Huang Y S et al. Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy[J]. Journal of Applied Physics, 109, 123508(2011). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5928288

[10] Wang X M, Mazumder S K, Shi W. Saturability algorithm of a sub-bandgap laser for triggering a photoconductive switch[J]. IEEE Journal of the Electron Devices Society, 5, 395-399(2017). http://ieeexplore.ieee.org/document/7972956/

[11] Leach J H, Metzger R, Preble E A et al. High voltage bulk GaN-based photoconductive switches for pulsed power applications[J]. Proceedings of SPIE, 8625, 86251Z(2013). http://spie.org/Publications/Proceedings/Paper/10.1117/12.2005548

[12] Zhou M Y, Zhou L, Zheng N et al. Investigation on properties of p-i-n structured GaN photodetectors[J]. Chinese Journal of Lasers, 38, 0117001(2011).

[13] Wang X M, Mazumder S K, Shi W. A GaN-based insulated-gate photoconductive semiconductor switch for ultrashort high-power electric pulses[J]. IEEE Electron Device Letters, 36, 493-495(2015). http://ieeexplore.ieee.org/document/7066903

[14] He Y J, Lü H L, Tang X Y et al. Experimental study on the 4H-SiC-based VDMOSFETs with lightly doped P-well field-limiting rings termination[J]. Solid-State Electronics, 129, 175-181(2017). http://www.sciencedirect.com/science/article/pii/S0038110116302751

[15] Liu E K[M]. Semiconductor physics, 168-169(2011).

[16] Zhao S Z, Li L, Zhao W K. Contrast research of VDMOS junction terminal technology[J]. Semiconductor Technology, 41, 46-50(2016).

[17] Taguchi S, Hasegawa K, Nomoto K et al. High threshold voltage normally-off GaN MISFETs using self-alignment technique[J]. Physica Status Solidi (c), 9, 858-860(2012). http://onlinelibrary.wiley.com/doi/10.1002/pssc.201100321/full

[18] Pearton S J, Abernathy C R, Ren F. Gallium nitride processing for electronics, sensors and spintronics[M]. London: Springer(2006).

[19] Skorupa W, Schmidt H. Subsecond annealing of advanced materials[M]. Cham: Springer(2014).

[21] Yi J Y, Tu B, Cao H X et al. Design and experiment on high-power direct-liquid-cooled thin-disk solid-state laser[J]. Chinese Journal of Lasers, 45, 1201004(2018).

[22] Yang Y, Wu R, Sun M Y et al. Collimation optical system with light field coupling of high-power lasers[J]. Chinese Journal of Lasers, 45, 0805001(2018).

[23] Jia W L, Ji W L, Shi W. Two-dimensional Monte Carlo simulation of screening of the bias field in terahertz generation from semi-insulated GaAs photoconductors[J]. Acta Physica Sinica, 56, 2042-2046(2007).