Laser & Optoelectronics Progress, Volume. 56, Issue 19, 192501(2019)
Design of 10-kV Vertical Double-Diffused Insulted-Gate Photoconductive Semiconductor Switch
Fig. 1. Device structure and equivalent circuit model of VDIG-PCSS. (a) Structure of one cell; (b) equivalent circuit
Fig. 2. Schematic of space-charge region distribution of VDIG-PCSS in static state
Fig. 3. Simulation models of VDIG-PCSS and traditional PCSS. (a) VDIG type; (b) traditional type
Fig. 4. Electric potential distribution of VDIG-PCSS at various bias voltages
Fig. 5. Comparison of volt-ampere characteristic curves of VDIG-PCSS and traditional PCSS
Fig. 6. Electric field distribution of VDIG-PCSS in static state when bias voltage is 10 kV (cutline at x=10 μm)
Fig. 7. Pulse waveforms of gate voltage and laser for triggering VDIG-PCSS
Fig. 8. Comparison of transient output characteristics of VDIG-PCSS and traditional PCSS
Fig. 9. Influences of laser beam diameter on photocurrent waveform of VDIG-PCSS
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Xinmei Wang, Huihui Wang, Lini Zhang, Pengchong Duan, Wanli Jia. Design of 10-kV Vertical Double-Diffused Insulted-Gate Photoconductive Semiconductor Switch[J]. Laser & Optoelectronics Progress, 2019, 56(19): 192501
Category: OPTOELECTRONICS
Received: Mar. 8, 2019
Accepted: Apr. 16, 2019
Published Online: Oct. 23, 2019
The Author Email: Wang Xinmei (wangxinmei@xaut.edu.cn)