Laser & Optoelectronics Progress, Volume. 56, Issue 19, 192501(2019)

Design of 10-kV Vertical Double-Diffused Insulted-Gate Photoconductive Semiconductor Switch

Xinmei Wang1、*, Huihui Wang2, Lini Zhang2, Pengchong Duan2, and Wanli Jia2
Author Affiliations
  • 1Faculty of Automation and Information Engineering, Xi'an University of Technology, Xi'an, Shaanxi 710048, China
  • 2Faculty of Sciences, Xi'an University of Technology, Xi'an, Shaanxi 710048, China
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    Figures & Tables(10)
    Device structure and equivalent circuit model of VDIG-PCSS. (a) Structure of one cell; (b) equivalent circuit
    Schematic of space-charge region distribution of VDIG-PCSS in static state
    Simulation models of VDIG-PCSS and traditional PCSS. (a) VDIG type; (b) traditional type
    Electric potential distribution of VDIG-PCSS at various bias voltages
    Comparison of volt-ampere characteristic curves of VDIG-PCSS and traditional PCSS
    Electric field distribution of VDIG-PCSS in static state when bias voltage is 10 kV (cutline at x=10 μm)
    Pulse waveforms of gate voltage and laser for triggering VDIG-PCSS
    Comparison of transient output characteristics of VDIG-PCSS and traditional PCSS
    Influences of laser beam diameter on photocurrent waveform of VDIG-PCSS
    • Table 1. Parameters for device simulation

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      Table 1. Parameters for device simulation

      RegionDoping concentration/cm-3Depth/μm
      n+1×10180.3(y1)
      p-2×10162
      p+1×10175(y2)
      n-1×101550(y3)
      SI1×107950
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    Xinmei Wang, Huihui Wang, Lini Zhang, Pengchong Duan, Wanli Jia. Design of 10-kV Vertical Double-Diffused Insulted-Gate Photoconductive Semiconductor Switch[J]. Laser & Optoelectronics Progress, 2019, 56(19): 192501

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    Paper Information

    Category: OPTOELECTRONICS

    Received: Mar. 8, 2019

    Accepted: Apr. 16, 2019

    Published Online: Oct. 23, 2019

    The Author Email: Wang Xinmei (wangxinmei@xaut.edu.cn)

    DOI:10.3788/LOP56.192501

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