[6] [6] Goiffon V, Estribeau M, Cervantes P, et al. Influence of transfer gate design and bias on the radiation hardness of pinned photodiode CMOS image sensors[J]. IEEE Trans.Nucl. Sci., 2014, 61(6): 3290-3301.

[7] [7] Virmontois C, Goiffon V, Magnan P, et al. Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology[J]. IEEE Trans. Nucl. Sci., 2010, 57(6): 3101-3108.

[8] [8] Wang Z, Liu C, Ma Y, et al. Degradation of CMOS APS image sensors induced by total ionizing dose radiation at different dose rates and biased conditions[J]. IEEE Trans.Nucl. Sci., 2015, 62(2): 2124-2131.

[9] [9] Wang Z, Ma W, Liu J, et al. Degradation and annealing studies on gamma rays irradiated COTS PPD CISs at different dose rates[J]. Nucl. Instrum. Methods Phys. Res., Sect.A, 2016, 820: 89-94.

[10] [10] Wang Z, Xue Y, Guo X. Measurement and analysis of the conversion gain degradation of the CIS detectors in harsh radiation environments[J]. Nucl. Instrum. Methods Phys.Res., Sect. A, 2018, 886: 134-139.

[11] [11] Goiffon V, Virmontois C, Magnan P, et al. Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors[J]. IEEE Trans. Nucl. Sci., 2012, 59(4): 918-926.

[12] [12] European Machine Vision Association (EMVA), EMVA Standard 1288[S], 2021, (4): 1-44.