Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Chinese Journal of Quantum Electronics, Volume. 22, Issue 1, 81(2005)

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81

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Paper Information

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Received: Nov. 14, 2003

Accepted: --

Published Online: May. 15, 2006

The Author Email: (yubo1978@hotmail.com)

DOI:

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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