Chinese Journal of Quantum Electronics, Volume. 22, Issue 1, 81(2005)
Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81