Chinese Journal of Quantum Electronics, Volume. 22, Issue 1, 81(2005)

Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD

[in Chinese]*... [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese] and [in Chinese] |Show fewer author(s)
Author Affiliations
  • [in Chinese]
  • show less
    References(6)

    [1] [1] Wang C A, Groves S H. New materials for diode laser pumping of solid-state lasers [J]. IEEE Journal of Quantum Electronics, 1992, 28(4): 942.

    [2] [2] Albert O. Reliability aspects of 980 nm pump lasers in EDFA applications [J]. Proc. of SPIE, 1998, 3284: 20-27.

    [3] [3] Chand N, et al. Growth and fabrication of high-performance 980 nm strained InGaAs quantum-well lasers for erbium-doped fiber amplifiers [J]. IEEE Journal of Quantum Electronics, 1994, 30(2): 424-440

    [4] [4] Matthews W, Jackson D C, Chambers A, et al. Effect of coherency strain and misfit dislocations on the mode of growth of thin films [J]. Thin Solid Films, 1975, 26(1): 129-134.

    [5] [5] Snyder C W, Orr B G, et al. Hydrogen complexes and their vibrations in undoped crystalline silicon [J]. Phys.Rev. Lett., 1991, (66): 253-258.

    [6] [6] Dietmar S, Zhong P, Tomoyaki M, et al. Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer [J]. Jpn. J. Appl. Phys., 1999, 38(9): 5023-5027.

    CLP Journals

    [1] Liu Menghan, Cui Bifeng, He Xin, Kong Zhenzhen, Li Sha, Huang Xinzhu. Study of High Power Semiconductor Laser with Low Threshold Current[J]. Chinese Journal of Lasers, 2016, 43(5): 502001

    [2] Dai Yin, Li Lin, Yuan Huibo, Qiao Zhongliang, Kong Lingyi, Gu Lei, Liu Yang, Li Te, Qu Yi, Liu Guojun. Research on Photoluminescence Properties of InGaAs/GaAs Strained Quantum Well[J]. Acta Optica Sinica, 2014, 34(11): 1131001

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimization of MOCVD-growth strain InGaAs/GaAs quantum wells and its application for 980 nm LD[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 81

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Nov. 14, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (yubo1978@hotmail.com)

    DOI:

    Topics