Fig. 1. Basic physical characteristics of materials.（a） Device structure diagram of HgTe/ZnO heterojunction；（b） the AFM image of HgTe film；（c） the AFM image of ZnO film；（d）the absorption spectrum of HgTe film；（e） the absorption spectrum of ZnO film；（f） XPS spectra of Zn 2p and O 1s orbitals of ZnO thin films

Fig. 2. The UPS of HgTe CQDs and ZnO QDs：（a）-（b） Valence band spectrum and second electron cutoffs of ZnO；（c）-（d） Valence band spectrum and second electron cutoffs of HgTe

Fig. 3. The HgTe CQDs/ZnO QDs heterojunction：（a） Energy band diagram of the device；（b） the optical image of device；（c） the Cross-sectional SEM image of device

Fig. 4. The photoelectric properties at room temperature：（a） The output characteristic curve of the HgTe/ZnO heterojunction detector under 520 nm laser illumination with power varying from 0 to 9 W cm^-2；（b） The linear dynamic response range of the HgTe/ZnO heterojunction detector at 0 V；（c） The transient response of the HgTe/ZnO heterojunction detector at 0 V；（d） The response bandwidth of the HgTe/ZnO heterojunction detector

Fig. 5. The photoelectric properties at low temperatures：（a） The output characteristic curves of the HgTe/ZnO heterojunction detector at 80 K under dark conditions and under illumination by a 1 625 nm laser；（b） The relationship between current noise and frequency for the HgTe/ZnO heterojunction detector at 80 K with a 1 V bias voltage；（c） The variable temperature output characteristic curves of the HgTe/ZnO heterojunction detector in the dark state；（d） The Arrhenius fitting graph of the HgTe/ZnO heterojunction detector under a bias voltage of 1 V