Photonics Research, Volume. 5, Issue 2, A7(2017)

Carrier localization in InGaN by composition fluctuations: implication to the “green gap”

Sergey Yu. Karpov
Author Affiliations
  • STR Group—Soft-Impact, Ltd., P.O. Box 83, 27 Engels Ave., St. Petersburg 194156, Russia (sergey.karpov@str-soft.com)
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    Figures & Tables(3)
    (a) Hole localization radius and energy factors corresponding to different electron kinetic energies Ee and (b) B/C ratio as a function of emission wavelength. Balls are data from [15], lines are calculations.
    Experimental [15] (balls) and theoretical (lines) radiative recombination constants calculated for (a) bulk InGaN and representative QWs and (b) for bulk InGaN with account of hole localization at different electron kinetic energies. Note that theoretical scales are shifted with respect to the experimental one for better comparison of spectral dependence of the B-constants.
    Experimental [15] (balls) and theoretical (lines) total Auger recombination constants calculated for (a) bulk InGaN with the account of phonon-assisted processes and (b) hole localization. Note that theoretical scales are shifted with respect to the experimental one for better comparison of spectral dependence of the C-constants.
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    Sergey Yu. Karpov. Carrier localization in InGaN by composition fluctuations: implication to the “green gap”[J]. Photonics Research, 2017, 5(2): A7

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    Paper Information

    Special Issue: RECENT DEVELOPMENTS IN LIGHT-EMITTING DIODE TECHNOLOGY AND APPLICATIONS

    Received: Nov. 1, 2016

    Accepted: Jan. 24, 2017

    Published Online: Sep. 26, 2018

    The Author Email:

    DOI:10.1364/PRJ.5.0000A7

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