Carrier localization in InGaN by composition fluctuations: implication to the “green gap”

Photonics Research, Volume. 5, Issue 2, A7(2017)

Sergey Yu. Karpov

Author Affiliations

STR Group—Soft-Impact, Ltd., P.O. Box 83, 27 Engels Ave., St. Petersburg 194156, Russia (sergey.karpov@str-soft.com)

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Sergey Yu. Karpov. Carrier localization in InGaN by composition fluctuations: implication to the “green gap”[J]. Photonics Research, 2017, 5(2): A7

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Paper Information

Special Issue: RECENT DEVELOPMENTS IN LIGHT-EMITTING DIODE TECHNOLOGY AND APPLICATIONS

Received: Nov. 1, 2016

Accepted: Jan. 24, 2017

Published Online: Sep. 26, 2018

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